Advantages of low VCEsat (PBSS-series) and high voltage, low VCEsat (PBHV-series) transistors
- Drive directly from a microcontroller
- Low on-resistance, high efficiency, high IC capabilities. A MOSFET can always outperform a bipolar but you need more silicon, especially for high voltage applications, and higher gate-source (VBE) voltage for lowest RDSon.
- Requires significantly less silicon for the same performance in high voltage applications compared to a high-voltage MOSFET
Single switch BLU application using low VCEsat bipolar transistor
For low voltage (< 100 V) LED strings, you can benefit from the advantages of a bipolar transistor by using just a single low VCEsat transistor in a medium-power package (SOT223, SOT89, SOT1061). Make sure that the maximum deviation of the forward voltage (VF) of the LCD string can be covered by the package of your choice.
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