Charging interface

Charging interface

NXP offers robust, energy efficient components for charger interfaces in their smallest form, which are ideal for portable devices such as cellular handsets or tablets. NXP provides a tailored portfolio of ESD protection diodes, TVS diodes for power line over-voltage protection, transistors, FETs and Fetkeys

Key features and benefits

NXP enables charging for portable devices such as cellular handsets, tablets, navigation devices or digital still cameras. Our solutions are highly reliable and efficient, ranging from wireless charging transmitters and receivers, to load switches, over-voltage over-current protection (OVPOCP) and ESD protection solutions.

Wireless charging

Our wireless charging solutions are built on a flexible and scalable architecture featuring:

  • High efficiency & low standby power consumption
  • Reliable interoperability
  • Smart NFC enhancements
  • Cost optimized BOM

Load switches

NXP's feature rich, logic controlled, high side load switches manage the distribution of power in application sub-systems to significantly reduce total power dissipation. Available in extremely small CSP packages and with a continuous current as low as 500 mA and as high as 3 A, NXP's range of load switches are suitable for multiple space constrained applications. Load switches are ideal for use in portable systems to extend battery life and optimize charging cycles.

Over-voltage over-current protection

NXP OVPOCP solution protects the charger interface in a device to ensure safe operational use.

TVS diodes

Our TVS diodes protect the charger interface of a PMU from transients and wrong polarity connections. The combination of a melting fuse with a TVS diode - in an ultra small CSP package - reduces footprint and costs.

Bipolar transistor / FET / FETkey

It doesn‘t matter if you need a FET, a FETkey or a low  VCEsat (BISS) transistor as a pass element for your PMU. We offer a comprehensive portfolio in small and ultra-small packages which will fit your needs.


Whether a mobile device is charged via the USB port or a separate charger, it is exposed to incorrect polarity or abnormally high voltages. Any of these two occurrences poses a threat to the charger circuit and the PMU of the mobile device. In addition, the USB/charger port can be subject to ESD strikes and other transient discharges.

NXP offers an application specific portfolio of TVS diodes and ESD arrays, which enable cost efficient protection solutions - ESD, reverse polarity, overvoltage, other transient discharges – with the smallest footprint.

Li-Ion battery charging topologies

Battery chargers using external pass elements can be grouped into two main paths:

  • Bipolar junction transistor (BJT) as pass element
    • BJT as current regulator
    • BJT as current regulator + MOSFET as control switch (Load switch)
  • MOSFET as pass element with additional back drive protection such as:
    • Single MOSFET + Schottky diode (FETky)
    • Double MOSFET

NXP is offering cost efficient pass elements - bipolar transistors, MOSFET & FETky - for all use cases related to battery charging.

Often power management units (PMU) with an external pass transistor are capable of controlling a MOSFET, when used a switching element. As an alternative, a lower cost bipolar transistor, with very low VCEsat can be used instead. NXP’s low VCEsat (BISS) transistor performs the same function as a MOSFET at a lower cost, with no need for a reverse blocking diode. So a MOSFET + Schottky diode, or a double MOSFET, can be replaced by a low VCEsat (BISS) transistor and a resistor.

Documentation for this application

File nameTitleTypeFormatDate
AN10910Protecting charger interfaces and typical battery charging topologies with external bypass transistors (1.0)Application notepdf2010-04-29
75017508NXP 12 V Qi Low Power Multi Coil Wireless Charging Transmitter Reference Design (1.0)Leafletpdf2014-01-03
75017504NXP 19 V Qi Low Power Wireless Charging Transmitter Reference Design (1.0)Leafletpdf2014-01-03
75017090Application guide; Portable devices and mobile handsets (3.0)Selection guidepdf2011-08-15

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