NXP offers robust, energy efficient components for charger interfaces in their smallest form, which are ideal for portable devices such as cellular handsets or tablets. NXP provides a tailored portfolio of ESD protection diodes, TVS diodes for power line overvoltage protection, Transistors, FETs and Fetkeys
NXP enables charging for portable devices such as cellular handsets, tablets, navigation devices or digital still cameras. Our solutions are more reliable and more efficient, with advanced ESD protection solutions and TVS diodes that protect the charging ICs, and low VCEsat(BISS) transistors that guard against power losses. All these options are available in small, space saving packages.
TVS diodes:
Our TVS diodes protect the charger interface of a PMU from transients and wrong polarity connections.
The combination of a melting fuse with a TVS diode in an ultra small CSP package is reducing footprint and costs.
Bipolar transistor / FET / FETkey:
It doesn‘t matter if you need a FET, a FETkey or a low VCEsat (BISS) transistor as a pass element for your PMU. We are offering a comprehensive portfolio in small and ultra-small packages which will fit your needs.
20 V, 3.5 A dual P-channel Trench MOSFET
Whether a mobile device is charged via the USB port or a separate charger, it is exposed to incorrect polarity or abnormally high voltages. Any of these two occurrences poses a threat to the charger circuit and the PMU of the mobile device. In addition, the USB/charger port can be subject to ESD strikes and other transient discharges.
NXP offers an application specific portfolio of TVS diodes and ESD arrays, which enable cost efficient protection solutions - ESD, reverse polarity, overvoltage, other transient discharges – with the smallest footprint.
Li-Ion battery charging topologies
Battery chargers using external pass elements can be grouped into two main paths:
NXP is offering cost efficient pass elements - bipolar transistors, MOSFET & FETky - for all use cases related to battery charging.
Often Power Management Units (PMU) with an external pass transistor are capable of controlling a MOSFET, when used a switching element. As an alternative, a lower cost bipolar transistor, with very low VCEsat can be used instead. NXP’s low VCEsat (BISS) transistor performs the same function as a MOSFET at a lower cost, with no need for a reverse blocking diode. So a MOSFET + Schottky diode, or a double MOSFET, can be replaced by a low VCEsat (BISS) transistor and a resistor.
| File name | Title | Type | Format | Date |
|---|---|---|---|---|
| AN10910 | Protecting charger interfaces and typical battery charging topologies with external bypass transistors (1.0) | Application note | 2010-04-29 | |
| 75016734 | Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications (1.0) | Leaflet | 2009-05-01 | |
| 75017090 | Application guide; Portable devices and mobile handsets (3.0) | Selection guide | 2011-08-15 |
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