Memory card interface

Memory card interface

NXP Semiconductors is simplifying the design cycle by offering a comprehensive portfolio of SD-memory card and MMC compatible interface conditioning and protection devices. This includes EMI filtering, system level ESD protection and biasing devices as well as level translators including also the memory card supply LDO.


Key features and benefits

  • Optimized solutions for compliance with their respective memory card interface in terms of:
    • channel capacitance,
    • serial resistance,
    • biasing resistor values.
  • High system level ESD protection
  • No disturbance from the harmonics of the digital memory interfaces
  • Maximum space savings compared to discrete solutions
  • Simple PCB layout
  • Tailored interface solutions for integration of SD cards in 1.8V interfaces.

Description

The SD-memory card and MMC are the most popular memory cards in today’s communication, computer and consumer appliances. They are designed to support state-of-the-art security and capacity requirements demanded by audio and video applications.

According the IEC61000-4-2 standard, SD host interfaces require an additional high-level ESD protection, in addition to the integrated ESDprotection which is typically very weak. Other strict EMI regulations and system requirements, as specified in GSM mobile phones, strongly request filters

that reduce the radiated/conducted EMI. However, they must still comply with the electrical requirements of the interface specification.

The continuing trend of miniaturization of portable appliances implies that interface devices offering ESD protection and EMI filtering should also integrate biasing circuits/resistors into a single small-sized package. NXP’s memory card interface solutions fully support this continuing trend and offer interface conditioning functions such as:

  • High-level ESD protection according the IEC61000-4-2 standard, often exceeding the highest specified level 4
  • EMI filtering, suppressing unwanted Radio Frequencies (RF), in combination with SD interface compliant physical signaling
  • Integrated biasing resistor networks to reduce the component count and to free up additional space on the Printed-Circuit Board (PCB) surface
  • A regulated power supply to supply SD-memory cards directly from e.g. a battery
  • Voltage level translation to enable the use of low-voltage host processors to communicate with 2.7 V to 3.6 V compliant SD-memory card devices

Documentation for this application

File nameTitleTypeFormatDate
AN10914SIM card EMI filtering and ESD protection using integrated discretes (1.0)Application notepdf2010-06-02
AN10911SD(HC)-memory card and MMC interface conditioning (1.0)Application notepdf2010-04-29
NXP_Mobile_UsageIntergrated discretes, interface conditioning and interface protection in mobile appliances (8.0)Brochurepdf2010-07-02
7501679830 dB EMI filter with up to 30 kV IEC contact ESD protection in leadless packages; NXP multi-channel ESD protection and EMI filter IP425xCZ8-4/CZ12-6/CZ16-8 IP4256CZ3-M/CZ5-W/CZ6-F (1.0)Leafletpdf2009-09-01
75016799Low-power, high-speed, dual-supply voltage translation (0.8 to 5.5 V) (1.0)Selection guidepdf2009-09-01
75017090Application guide; Portable devices and mobile handsets (3.0)Selection guidepdf2011-08-15

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