Tower mounted amplifier

Tower mounted amplifier

Our Low Noise Amplifier portfolio is based on our high speed, silicon QUBiC4-BiCMOS process. QUBiC4 silicon components meet the performance requirements of RF base stations while offering greater functionality than traditional gallium arsenide (GaAs) components, at similar or lower cost.


Key features and benefits

NXP’s integrated LNAs in QUBiC4-technology meet highest performance requirements and offer more functionality than traditional GaAs components at similar or lower cost
 


Description

Low Noise Amplifiers

The LNAs of the BGU705x series provide low noise figure (NF) of 0.6 dB and high linearity output third-order intercept point of 30 dBm. This family of pin-compatible products is internally matched with 50Ohms, has high input return loss and is designed to operate between 500 MHz and 3800 MHz. The products are ESD protected on all terminals, and housed in HVSON10 leadless packages. Compared to GaAs based discrete equivalents they offer lower DC power consumption, high immunity to high input level signals, better spurious emission performance, and increased output power.


Documentation for this application

File nameTitleTypeFormatDate
75017347Enabling the Mobile Experience (1.0)Brochurepdf2013-02-05

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