A power stronghold
NXP has built a strong position in RF transistors for basestation power amplifiers with reliable and innovative solutions. These include our LDMOS technology, which offers best in-class efficiency, power and ruggedness, and our new, high-speed technology using gallium nitride (GaN) material.
Small-signal, big choice
Choose the best-fit solution for your application from our extensive portfolio of small signal RF components including low noise amplifiers (LNAs), variable gain amplifiers (VGAs), mixers, local oscillators (LOs), analog to digital converters (ADCs) and digital to analog converters (DACs).
Our portfolio is based on high speed, state-of-the-art silicon technologies such as our QUBiC4 BiCMOS process. QUBiC4 silicon components meet the performance requirements of RF base stations while offering greater functionality than traditional gallium arsenide (GaAs) components, at similar or lower cost.
A better standard for data converters
Our highly competitive high-speed ADCs and DACs feature three different data interfaces, including the industry’s first implementation of JEDEC JESD204A (2008). This new standardized serial interface dramatically reduces the number of interconnect signals between data converters and logic devices. It also solves one of the major basestation design challenges by synchronously bonding multiple data converter channels or lanes.
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