MOSFETs
Smaller, faster, cooler
As a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find the package options are no longer ideal in my application?
The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the most important parameters essential for your latest high efficiency and high reliability designs. Get more performance with less compromise.
LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages.
Key products
- PSMN0R9-25YLC N-channel 25 Volt 0.75 mOhm logic level MOSFET in LFPAK
- PSMN1R0-30YLC N-channel 30 Volt 0.85 mOhm logic level MOSFET in LFPAK
- PMV22EN 30 V, 5.2 A N-channel Trench MOSFET
- PMV48XP 20 V, 3.5 A P-channel Trench MOSFET
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- NXP Drives Miniaturization with Ultra-Compact Power Management Solution for Portable Devices
- NXP Small-Signal MOSFETs Set New Benchmark in RDS(on)
- NXP NextPower MOSFETs Deliver All-Around Efficiency With Industry's Lowest RDS(on)
- NXP Unveils 30V MOSFET with Industry's Lowest RDSon
- NXP Announces The First Leadless Package With Tin-Plated, Solderable Side Pads