We understand that having good technical documentation and information at your fingertips is always welcomed. So to help you with getting the right balance of power, size and value when using our discrete solutions we have developed a few technical papers that we hope you will find very useful.
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1. Advances in Schottky Diodes for Power Management
Any non-synchronous DC/DC converter requires a so-called freewheeling diode. To optimize overall solution efficiency, one typically tends to choose a low forward voltage schottky for this function. In many cases, the design uses a diode that is recommended by the (web-based) tool which is used to design the converter. This does not always result in the most optimal diode choice. Moreover, if a design tool does not consider the dynamics that exist between thermal and leakage behavior, there is a real chance that actual performance will be very different from what is shown in a design-tool analysis or simulation. This article will discuss some of the typical parameters that should be examined in order to make a correct diode selection and how they can be used to quickly make sure that the diode you selected will do the job correctly.
2. Low Voltage Superjunction Power MOSFET: An Application Optimized Technology
A detailed analysis of the power loss mechanisms in synchronous DC-DC converters has been undertaken to identify the critical MOSFET parameters that require improving to ensure that system efficiencies and power densities continue to increase. The analysis shows that the commonly used figures of merit (FOMs) based on QG and QGD (i.e. RDS(on) x QG and RDS(on) x QGD) are no longer sufficient when developing power MOSFET technologies, and if followed religiously, can lead to non-optimal technology choices. The insights gained from this work have been employed to define a set of FOMs that were then used to develop a new low voltage power MOSFET technology. The resulting 30 V technology, based on the superjunction concept, is ideally suited for DC-DC conversion and in contrast to competing technologies such as lateral and split-gate trench MOSFETs, this approach simultaneously offers low specific RDS(on), QG, QGD, QOSS, and high gate-bounce immunity.