High Performance RF Applications

When it comes to the most demanding RF applications, the first thing on your mind is meeting the specified performance. That is exactly what NXP enables you to do, with the added benefits of silicon-based, volume manufacturing process technologies. That means you can design your systems to the highest specifications and balance efficiency, power, ruggedness, consistency and integration levels.

From satellite receivers, cellular base stations and broadcast transmitters to ISM (Industrial, Scientific, and Medical) and aerospace and defense applications, you will find the high-performance RF products you need. NXP's product innovations ensure you always have the most effective solutions at your fingertips - whether it's Doherty power amplifier architectures, JESD204A serialized data interfaces or minute GPS LNAs.

So if you're looking to improve your RF performance, design a highly efficient signal chain or break new ground with an innovative ISM application, then NXP's creative thinking, expert support and products can help you every step of the way.

Adding design freedom to pulse performance

Performance. That is the key word when it comes to aerospace and defense applications. NXP continues to support designers in this field with high efficiency avionics, L- and S-band LDMOS power amplifiers that match the performance of older bipolar process technologies, while delivering better reliability, ruggedness, gain and efficiency. Even more so, advanced GaN technology based devices enable even higher power levels, efficiencies and are more broadband and have smaller footprint than LDMOS.

Now with the release of our JESD204A ADCs and DACs, along with SiGeC discretes and MMICS that match GaAs performance, NXP offers designers an increased level of design freedom without compromising overall system performance. That simplifies the task of bringing new, more complex radar designs and systems come online.

Solid-state Active Electronically Scanned Arrays (AESA) systems for example, benefit dramatically from improved overall system performance and reliability compared with traditional mechanical phased array radars. Our JESD204A converters coupled with our high performance SiGeC technology enable more compact and efficient design architectures with a significant reduction in routing challenges. And our innovative GaN technologycombines high frequency with high power.

Key features

• High gain and efficiency avionics-, L- and S-band power amplifiers based on LDMOS and GaN
• reduces component count and considerably simplifies radar design
• no danger for thermal runaways
• large flexibility with respect to pulse format used (pulse droop much smaller and insertion phase much more stable than for bipolar technologies)
• devices can be overdriven to +5dB without risk of failure or damage
• Extensive portfolio of RF small signal components based on SiGeC BiCMOS
• JESD204A-compliant data converters for simpler and cost-reduced PCB routing
• GaAs performance with silicon (LDMOS and SiGeC) benefits
• reduced parameter spread by 50% - no further tuning required
• easy integration of circuitry
• high volume manufacturing reliability

Pure RF power gets your message out

Manufacturers of broadcast equipment are under increasing pressure to deliver richer content to our screens, putting greater strain on transmitters with costs often spiraling out of control. Today's high-performance TV transmitters constitute serious investments, and broadcasters rightly seek to utilize the maximum power available so they can build fewer systems with the least amount of costly PA transistors and board space.

While RF power transistors are perhaps the smallest part in actual size, the difference made to the bottom line is significant when you consider the expenditure involved. NXP continues to be a leader in this market by delivering efficient, powerful and cost-effective solutions to our customers.

Key features

• Highest power enabled by 40 and 50 V LDMOS processes
• Unprecedented ruggedness
• Best performance over entire UHF bandwidth
• Power density up to 2 W/mm, doubled compared to VDMOS

Key downloads

• RF power UHF/DVB-T broadcasting at its best
• The most powerful LDMOS broadcast transistor delivering 125 W output power
• Digital broadcasting at its best
• LDMOS RF power transistor delivering 1000 W of CW output power

Uncompromised ruggedness powers ISM

The growing popularity of the ISM (Industrial, Scientific, and Medical) band is enabling a whole host of new RF applications. Ruggedness, or the ability to withstand a mismatch condition without failure, is one of the most important reliability parameters in this area. To understand why, you just need to imagine the variable loading conditions that RF powered plasma applications need to cope with.

NXP has been leading the way in ruggedness since we introduced our first LDMOS transistors nearly a decade ago and some of our 6th generation LDMOS transistors have been proven to be virtually indestructible. Basically all of our transistors are designed to withstand a mismatch of at least 10:1 (VSWR). For the demanding load of ISM application this is often not enough. To tackle even the harshest RF environment, we developed an XR -"extremely rugged" technology node. Devices based on this technology have proven practically unbreakable and can even take the place for those made in VDMOS technology.

So no matter what application you are designing, NXP LDMOS amplifiers will ensure you can power it.

Key features

• Power levels up to 1200W per single device
• Excellent, field-proven ruggedness
• able to drive variable load impedances

Key downloads

• LDMOS RF power transistor delivering 1000 W of CW output power

Streaming bits back and forth through silicon

It is not always easy to get access to the world. In some regions it can be almost impossible to install cable or wireless networks. Satellite services have always been the alternative solution in these areas but the option to include a return channel has been difficult. That was until the introduction of Very Small Aperture Terminal (VSAT) terminals. And as these terminals have become more portable and affordable, their popularity has increased significantly.

VSAT and satellite LNB designers need to carefully balance requirements to be light, very efficient, offer faster data rates while driving down costs and time-to-market. NXP's SiGeC process technology helps achieve that balance. It enables the most critical parts of the transceiver function to be integrated into the VSAT system. That vastly simplifies circuit level implementation, reducing manufacturing complexity which in turn reduces yield loss tremendously.

Our LO Generators for example are the most integrated and complete RF-tested solutions on the market for these high frequency microwave systems. They deliver compact designs and reduce cost significantly, while operating with lower power dissipation than traditional solutions.

Key features

• The most integrated products at the lowest cost-of-ownership for the market
• Complete RF-tested solutions
• Next generation LNAs and IF amplifiers (no tuning required) help simplify the overall design

The most efficient signal chain

Wireless infrastructure is going through significant changes. The success of data-centric smartphones and cellular data modems with "flat rate plans" is overwhelming the capability of today's networks. To boost network bandwidth, faster air interface technologies like LTE are required. In addition smaller distributed base stations, remote radio heads and multi antenna arrays will help meet increasing metropolitan service level expectations.

All this requires ever greater levels of efficiency to not only meet the overall increase in power consumption, but to allow base station designs to be shrunk to fit into more compact designs. NXP continues to work with major OEMs to drive system efficiencies ever higher. By understanding the complete signal chain, from bits to antenna and from antenna back to bits, NXP is helping deliver the improvements needed. That includes introducing innovative Doherty architectures for power amplifiers, developing the JESD204A serial interface for much simplified serial routing for data conversion, and enabling RF integration in the RF/IF portions of base stations.

Key features

• Complete portfolio covering the entire signal chain
• Strong position in RF power transistors for base station power amplifiers
• more than 300W per device @ 2.1GHZ
• best in class power efficiency
• Extensive portfolio of RF small signal components based on Si, SiGe and SiGe:C BiCMOS
• Highly competitive data converter portfolio including JESD204A-compliant devices