NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon with the high performance LFPAK package, our new devices provide customers with numerous performance and reliability advantages.
- World's first <1 mΩ (1) 25 V MOSFET in a Power-SO8 footprint
- World's lowest RDS(ON) MOSFET at 30 V (2)
- The only Power-SO8 devices rated to 175 °C
- The only Power-SO8 package automotive rated to AEC - Q101
- The LFPAK is rated for ID(MAX) up to 100 A
- Fully compatible with visual inspection machines (unlike many Power-SO8 alternatives which require X-ray inspection)
- Avalanche rated
- ROHS compliant and halogen-free
- SOT669 and SOT1023 versions
(1) PSMN1R2-25YL has RDS(ON) (typ) = 0.9 mΩ and RDS(ON) (max) = 1.2 mΩ at Vgs=10 V
(2) PSMN1R3-30YL has RDS(ON) (typ) = 1.06 mΩ and RDS(ON) (max) = 1.3 mΩ at Vgs=10 V
Related links
- NXP Claims Breakthrough in MOSFET Performance with World’s First Sub 1 MilliOhm MOSFET in a Power S08 Package
Nine new Trench 6 MOSFETs in a Power SO8 Package
PSMN1R2-25YL- PSMN1R5-25YL
- PSMN1R3-30YL
- PSMN2R6-40YS
- PSMN4R0-40YS
- PSMN8R3-40YS
- PSMN8R2-80YS
- PSMN013-80YS
- PSMN026-80YS
In addition to the Power-SO8 range we've further extended the range of Trench 6 MOSFETs with ten new devices in the industry-standard TO220 (SOT78) package operating at 30 V, 40 V and 80 V.
Related links
In addition to the Power-SO8 range we've further extended the range of Trench 6 MOSFETs with ten new devices in the industry-standard TO220 (SOT78) package operating at 30 V, 40 V and 80 V.
- NXP Claims Breakthrough in MOSFET Performance with World’s First Sub 1 MilliOhm MOSFET in a Power S08 Package
- Ten new high performance Trench 6 MOSFETs in a TO220 package
- PSMN1R6-30PL
- PSMN2R0-30PL
- PSMN4R3-30PL
- PSMN2R2-40PS
- PSMN4R5-40PS
- PSMN8R0-40PS
- PSMN4R4-80PS
- PSMN5R0-80PS
- PSMN012-80PS
- PSMN050-80PS
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