At NXP, we use next-generation process technologies and decades of design experience to drive innovation in RF products and RF Power solutions. We offer world-class solutions for GPS, satellite, WiMAX, basestation, microwave, and broadcast applications, and had them all on display at the recent MTT-S event in Atlanta.
We showcased our industry-leading capabilities in high-frequency RF ICs and RF discretes, and held free, two-hour workshops on RF Power SMPAs and Doherty applications.
- External LNA for seamless GPS coexistence
Solve the cohabitation problems of GPS and simultaneous (W-)CDMA/GSM, Bluetooth, and FM transmit/receive with this LNA, produced in SiGe:C BiCMOS technology. It restores sensitivity, guarantees immunity against out-of-band GSM signals, delivers shorter time to first fix (TTFF), improves tracking sensitivity, and improves the user experience.
- Next-generation LNB and VSAT solutions in Ku and Ka bands
Choose between discrete solutions and highly integrated ICs for designs that deliver high reliability with the lowest cost of ownership. The SiGe:C BiCMOS process used to produce our ICs combines the performance of GaAs with the reliability of Si-based processes, for the best possible solution.
- Gen7 LDMOS technology (BLC7G22-130)
Our seventh-generation (Gen7) LDMOS technology is optimized for high power use and Doherty applications. It enables the highest-efficiency LDMOS solutions available today, with improved performance on power density and power efficiency, with a 20 to 30% lower thermal resistance (Rth) than the Gen6 technology. The lower output capacitance enables wideband output matching and leads to simpler, better performing Doherty amplifier designs.
- World's first asymmetrical Doherty for WiMAX
Our reference design is the first for asymmetrical Doherty in WiMAX and uses our best-performing LDMOS technology. It delivers an optimized Doherty architecture for high PAR, and covers the full WiMAX frequency band from 2.5 to 2.7 GHz.
- World's first high-voltage LDMOS power amplifier for HDTV broadcast (BLF878)
Using advanced flange material, the BLF878, the world's first true 300-W UHF transistor, offers better reliability and lower integral system costs. It supports the entire UHF band at 300 W CW, delivers 55% efficiency for CW and 32% for digital broadcast. It has a gain of more than 18 dB, very good ruggedness, and has a DVB-T rating of 75 W at IMD3 = -32 dBc.
- Better performance in general-purpose applications (BLF574)
The BLF574 is a new, high-voltage (400 W), high-power continuous wave device that delivers a power gain of 26 dB and a drain efficiency of 70%. Designed for general-purpose applications, it supports frequencies up to 500 MHz.
Free SMPA and Doherty workshops
We also held free seminars that covered two of the most compelling issues in RF Power today - switched-mode power amplifiers (SMPAs) and Doherty applications.
Related links
- NXP portfolio for RF ICs and RF discretes
- NXP portfolio for RF Power ICs
- International Microwave Symposium (MTT-S)
- eNews sign-up
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