Explanation of most significant SPICE parameters

In the following, you will find an abstract of the most significant spice parameters.

Transistor parameters

IS Saturation current. It determines IC @ VBE=0V
NF Forward current emission coefficient (determines the slope of the IC curve)
NR Reverse current emission coefficient
ISE Base-emitter leakage saturation current (determines IB @ VBE=0V)
ISC Base-collector leakage saturation current
NE Base-emitter leakage emission coefficient (determines the slope of IB curve @ low VBE, forward mode)
NC Base-collector leakage emission coefficient (determines the slope of IB curve @ low VBE, reverse mode)
BF Ideal maximum forward current gain
BR Ideal maximum reverse current gain
VAF Forward early voltage
VAR Reverse early voltage
IKF Corner for forward hFE high-current roll-off (controls where hFE falls at high IC, forward mode of operation)
IKR Corner for reverse hFE high-current roll-off (controls where hFE falls at high IC, reverse mode of operation)
RE, RC serial resistances to the device terminals emitter, collector and base
RB Zero-bias base resistance
RBM Minimum base resistance at high currents
CJC, VJC, MJC control collector capacitance and its variation with Ucb
CJE, VJE, MJE control emitter capacitance and its variation with Ueb
TF Ideal transit time forward (influence on transit frequency and switching speed)
TR Ideal transit time reverse (influence on switching storage times)
XTB Thermal behavior, controls variation of forward and reverse hFE by temperature

Diodes parameters

IS saturation current (leakage current)
N emission coefficient (ideal diode: N=1)
BV reverse breakdown voltage
IBV current at breakdown voltage
RS serial ohmic resistance
CJ0 zero bias junction capacitance
VJ junction potential
M grading coefficient
FC forward capacitance switching coefficient
TT transition time
EG activation energy
XTI saturation current temperature exponent
R1 parallel ohmic resistance

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