Code history

Model history

Since the updates for SiMKit 3.1 (May 2008) the code history is included in the model history. Older code history can be found below.

MOS model 2002

Below is an overview of the relation between level and code versions.
The background of the compact model identification scheme can be read here.

MOS2002 SiMKit
level.version.implementation code revision release date
2002.2.7 1.85 3.7 2011-08-04
2002.2.7 1.81 3.6 2011-01-18
2002.2.6 1.76 3.5.2 2010-01-12
2002.2.5 1.62 3.4 2009-12-17
2002.2.4 1.58 3.3 2009-06-25
2002.2.3 1.56.2 3.2 2008-12-02
2002.2.2 1.54 3.1.2 2008-07-24
2002.2.2 1.54 3.1 2008-05-11
2002.2.1 1.44.2.1 3.0.3 2008-01-31
2002.2.0 1.29 2.5 2007-04-30
2002.1.0 1.21 2.4 2006-10-23
2002.0.0 1.6 2.3 2006-07-07
2011/01 Release of MOS MODEL 20, 2002.2.7
 
  • Minor code changes: e.g. redundant branch Qg removed.
2010/10 Release of MOS MODEL 20, 2002.2.6
 
  • Minor code changes
2009/12 Release of MOS MODEL 20, 2002.2.5
2009/06 Release of MOS MODEL 20, 2002.2.4
 
  • minor code changes
2008/12 Release of MOS MODEL 20, 2002.2.3
 
  • minor code changes
2008/05 Release of MOS MODEL 20, 2002.2.2
 
  • A discontinuity in drain current in MOS model 2002 has been resolved. The discontinuity occurred in the accumulation region.
  • The parameters the3d and a1dr scale (inversely) with the drift-region width, rather than with the channel-region width.
2007/04 Release of MOS MODEL 20, 2002.2.0
 
  • Self-heating has been added to the model
  • The clipping of the effective width of the transistor was not handled correctly, which ended up in an error when the effective width became less than, or equal to, 0. This is solved now by clipping the width in the correct way.
2006/10 Release of MOS MODEL 20, 2002.1.0
  Avalanche current of the drift region has been included in the model. Please note that some parameters have a new name, and some parameters have been added. Details can be found in the Modelbook.
2006/03 Release of MOS MODEL 20, 2002.0.0
  Release of MOS Model 20, level 2002 is available as a test version. Release of MOS Model 20, level 2002 is available as a test version. Velocity saturation in the drift region has been included.

MOS model 2001

Below is an overview of the relation between level and code versions.
The background of the compact model identification scheme can be read here.

MOS2001 SiMKit
level.version.implementation code revision release date
2001.0.9 1.169 3.3 2009-06-25
2001.0.8 1.167.2 3.2 2008-12-02
2001.0.7 1.165 3.1.2 2008-07-24
2001.0.7 1.165 3.1 2008-05-21
2001.0.6 1.153.2.1 3.0.3 2008-01-31
2001.0.5 1.138 2.5 2007-04-30
2001.0.4 1.130 2.4 2006-10-23
2001.0.3 1.117 2.3 2006-03-16
2001.0.2 1.107 2.2 2005-08-03
2001.0.1 1.104 2.1.1 2005-04-11
2001.0.0 1.78 2.0.1 2004-11-17

The table below outlines the major changes to the file called "device_m2001i.c".

2009/12 MOS MODEL 20, 2001 will be no part of SiMKit 3.4, nor of any future SiMKits
2009/06 Release of MOS MODEL 20, 2001.0.9
 
  • minor code changes
2008/12 Release of MOS MODEL 20, 2001.0.8
 
  • minor code changes
2008/05 Release of MOS MODEL 20, 2001.0.7
  The output units of the parameters KOD and KODR have been corrected to V^1/2
2007/04 Release of MOS MODEL 20, 2001.0.5
  The clipping of the effective width of the transistor was not handled correctly, which ended up in an error when the effective width became less than, or equal to, 0. This is solved now by clipping the width in the correct way.
2005/04 Release of MOS MODEL 20, 2001.0.1
  Self-heating has been included in the model.
2004/10 Release of MOS MODEL 20, 2001.0.0
  This update includes some practical changes, like the pinch-off voltage Voxp0, the clip-low value of m and of lD, and the implementation of the noise transfer function.
2004/01 Release of MOS MODEL 20, 2001.0, test version
  This update omits the source-drain interchange for the dc-current description.
2003/10 Release of MOS MODEL 20, 2001.0, test version

Code history

MOS model 2002

The table below outlines the major changes to the file called "device_m2002i.c", which can be found in the source code.

2008/01/31 MOS Model 2002.2.1.
  Code changes
 
  • New flexible topology architecture implemented
  • Small improvement in noise implementation for non-correlated noise sources
2007/04/30 MOS Model 2002.2.0 is identified in the code as revision 1.29. All code differences with the previous version (1100.3.6) can be found in this diff file.
  Implemented model changes
 
  • see release 2002.2 in the model history above
  Minor code changes
2006/10/23 MOS Model 2002.1.0 identified in the code as revision 1.21. All code differences with the previous version (2002.0.0) can be found in this diff file.
  Implemented model changes
 
  • See release 2002.1 in the model history above
  Other code changes
  Minor code changes
 
  • There was a warning regarding specifying the working region when using spectre -h <model name>. This warning is removed.
  • In the past an unclear warning was given when the effective length and/or effective width of a transistor were clipped. This warning has been made more specific.

MOS model 2001

2008/01/31 MOS Model 2001.0.6.
  Code changes
 
  • New flexible topology architecture implemented
  • Small improvement in noise implementation for non-correlated noise sources
2007/04/30 MOS Model 2001.0.5 is identified in the code as revision 1.138. All code differences with the previous version (1100.3.6) can be found in this diff file.
  Implemented model changes
 
  • see release 2002.2 in the model history above
  Minor code changes
2006/10/23 MOS model 2001.0.4 identified in the code as revision 1.130. All code differences with the previous version (2001.0.3) can be found in this diff file.
  Implemented model changes
 
  • A gmin convergence aid has been implemented. This makes the convergence more robust. The results are not always only positive but also in some cases the convergence may be slower. The gmin convergence aid implementation has been made common to all simulators.
  • The performance of self-heating models has been improved by reducing the time spent in clipping.
  Minor code changes
 
  • There was a warning regarding specifying the working region when using spectre -h <model name>. This warning is removed.
  • In the past an unclear warning was given when the effective length and/or effective width of a transistor were clipped. This warning has been made more specific.
2006/03/16 MOS Model 2001.0.3 identified in the code as revision 1.117. All code differences with the previous version (2001.0.2) can be found in this diff file.
  Implemented model changes
 
  • None
  Other code changes
  Minor code changes
2005/08/03 MOS Model 2001.0.2 identified in the code as revision 1.107. All code differences with the previous version (2001.0.1) can be found in this diff file.
  Implemented model changes
 
  • None
  Other code changes
  Minor code changes
2005/04/11 MOS Model 2001.0.1 identified in the code as revision 1.104. All code differences with the previous version (2001.0.0) can be found in this diff file.
  Implemented model changes
 
  • Self-heating has been included in the model.
  Other code changes
  Convergence problems solved by correcting the implementation of derivatives of Ddibl . Wrong clipping values corrected for LAMD
2004/11/17 Introduction of MOS MODEL 20, level 2001.
  This update includes some practical changes, like the pinch-off voltage Voxp0, the clip-low value of m and of lD, and the implementation of the noise transfer function.
2004/01 Update of MOS model 20, level 2001, test version
  This update omits the source-drain interchange for the dc-current description.
2003/10 Release of MOS Model 20, level 2001, test version

Known bugs

There are no known bugs in MOS Model 20, level 2001.

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