Introduction to MOS Model 40

MOS Model 40 is a physics based transistor model to be used in circuit simulation and IC-design of analogue high-voltage applications processed in Silicon-on-Insulator (SOI). The model describes the electrical behaviour of an accumulation/depletion-type MOSFET in SOI. The model is used as drain extension of high-voltage MOS devices, like the Lateral Double-diffused MOS (LDMOS), the Vertical Double-diffused MOS (VDMOS), and the Extended MOS transistors.

Read more about MOS Model 40.

Model definition of MOS Model 40

The model definition of MOS Model 40 is available as PDF files:

• MOS Model 40, level 40

The history of MOS Model 40 can be found here.

Source Code & Library

The source code of MOS Model 40 is available here.
The file containing the MOS Model 40 code is called "device_m4000.c". If you use the included solver, please make sure that you compile on a system that supports Fortran 77.

The history of the source code can be found here.

The models are included in a dynamically loaded library called SiMKit.

SiMKit is related to the following circuit simulators used within NXP:

• Pstar, the circuit simulator from NXP
• Spectre, the circuit simulator from Cadence
• ADS, the circuit simulator from Agilent.

You can read how to download and install the libraries here.

The source code is protected by Copyright © 1991, 2007, NXP.

Additional documentation

There is no additional documentation on MOS Model 40 available.

Related publications

There are no related publications on MOS Model 40 available.