An equivalent electrical circuit of a high-voltage MOS device can be described by an enhancement-type MOSFET, like MOS Model 9, MOS Model 11 or MOS Model PSP in series with one or more accumulation/depletion-type MOSFETs, like MOS Model 31 or MOS Model 40. Or one can use the single LDMOS model MOS Model 20, combined with an accumulation/depletion-type MOSFET for higher voltages if necessary.

The following High-Voltage MOS Models are available:

• The Lateral Double-diffused-MOS (LDMOS) MOS Model 20;
• The junction-isolated accumulation/depletion-type MOS Model 31;
• The accumulation/depletion-type MOS Model 40 in SOI;

For the description of bipolar transistors in special processes with lateral drift regions Mextram or Modella can be used in conjunction with either MOS Model 31 or MOS Model 40.