Introduction to MOS Model 31
MOS Model 31 is a physics based transistor model to be used in circuit simulation and IC-design of analogue high-voltage applications. The model describes the electrical behaviour of a junction-isolated accumulation/depletion-type MOSFET. The model is used as the drain extension of high-voltage MOS devices, like the Lateral Double-diffused MOS (LDMOS), the Vertical Double-diffused MOS (VDMOS), and the Extended MOS transistors.
Model definition of MOS Model 31
The model definition of MOS Model 31 is available as PDF files:
- Its predecessor, called MOS Model 30,
level 3002 (297kB) - MOS Model 31, level 3100 (415kB)
- Definition of hyp functions (113kB) used in the models.
The history of MOS Model 31 can be found here.
Source Code & Library
The source code of MOS Model 30 and the source code of MOS Model 31 are available here. The file containing the MOS Model 31 code is called "device_m3100.c", while the file "device_m30.c" contains the MOS Model 30 code. If you use the included solver, please make sure that you compile on a system that supports Fortran 77.
The history of the source code can be found here.
The models are included in a dynamically loaded library called SiMKit.
SiMKit is related to the following circuit simulators used within NXP:
- Pstar, the circuit simulator from NXP
- Spectre, the circuit simulator from Cadence
- ADS, the circuit simulator from Agilent.
You can read how to download and install the libraries here.
The source code is protected by Copyright © 1991, 2007, NXP.
Additional documentation
There is no additional documentation on MOS Model 31 available.
Related publications
Further information on MOS Model 31 is available in the following related publications:
- "Modelling of High-Voltage SOI-LDMOS Transistors including Self-Heating", A.C.T. Aarts, M.J. Swanenberg and W.J. Kloosterman, Proc. SISPAD, 2001, pp. 246-249. (290kB).
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