Introduction to MOS Model 40
MOS Model 40 is a physics based transistor model to be used in circuit simulation and IC-design of analogue high-voltage applications processed in Silicon-on-Insulator (SOI). The model describes the electrical behaviour of an accumulation/depletion-type MOSFET in SOI. The model is used as drain extension of high-voltage MOS devices, like the Lateral Double-diffused MOS (LDMOS), the Vertical Double-diffused MOS (VDMOS), and the Extended MOS transistors.
Model definition of MOS Model 40
The model definition of MOS Model 40 is available as PDF files:
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MOS Model 40,
level 40 (437kB)
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Definition of hyp functions (113kB) used in the models.
The history of MOS Model 40 can be found here.
Source Code & Library
The source code of MOS Model 40 is available here.
The file containing the MOS Model 40 code is called "device_m4000.c". If you use the included solver, please make sure that you compile on a system that supports Fortran 77.
The history of the source code can be found here.
The models are included in a dynamically loaded library called SiMKit.
SiMKit is related to the following circuit simulators used within NXP:
- Pstar, the circuit simulator from NXP
- Spectre, the circuit simulator from Cadence
- ADS, the circuit simulator from Agilent.
You can read how to download and install the libraries here.
The source code is protected by Copyright © 1991, 2007, NXP.
Additional documentation
There is no additional documentation on MOS Model 40 available.
Related publications
There are no related publications on MOS Model 40 available.