Physical effects

The PSP model is a symmetrical, surface-potential-based model, giving an accurate physical description of the transition from weak to strong inversion. The PSP model includes an accurate description of all physical effects important for modern and future CMOS technologies, such as:

• mobility reduction
• bias-dependent series resistance
• velocity saturation
• conductance effects (CLM, DIBL, etc.)
• lateral doping gradient effect
• mechanical stress related to STI
• gate leakage current
• gate-induced drain leakage
• gate depletion
• quantum-mechanical effects bias-dependent overlap capacitances

In addition, it gives an accurate description of charges and currents and their first-order derivatives (transconductance, conductance, capacitances), but also of their higher-order derivatives. In other words, it gives an accurate description of MOSFET distortion behaviour, and as such the PSP model is suitable for digital, analog as well as RF circuit design.