Physical effects
MOS Model 11 (MM11) is a symmetrical, surface-potential-based model, giving an accurate physical description of the transition from weak to strong inversion. MM11 includes an accurate description of all physical effects important for modern and future CMOS technologies, such as:
- mobility reduction
- bias-dependent series resistance
- velocity saturation
- conductance effects (CLM, DIBL, etc.)
- gate leakage current
- gate-induced drain leakage
- gate depletion
- quantum-mechanical effects
- bias-dependent overlap capacitances
MM11 not only gives an accurate description of charges and currents and their first-order derivatives (transconductance, conductance, capacitances), but also of their higher-order derivatives. In other words it gives an accurate description of MOSFET distortion behaviour, and as such MM11 is suitable for digital, analog as well as RF circuit design.