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Introduction to MOS Model PSP
The PSP model has been developed jointly by Philips Research and the group of Prof. Gildenblat at Penn State University. The development goals have been:
- suitable for digital, analog, and RF;
- suitable for modern and future bulk CMOS technologies;
- physics-based;
- combining the best features of SP model (Penn State University) and MOS Model 11 (NXP);
- number of parameters and simulation time comparable to MOS Model 11;
- simple parameter extraction.
Read more about MOS Model PSP.
Model definition of MOS Model PSP
The model definition of 
MOS Model PSP is available
in PDF format.
The history of the PSP model can be found here.
The PSP model is a new compact MOSFET model, which has been jointly developed by Philips Research and Penn State University. It is a surface-potential based MOS Model, containing all relevant physical effects (mobility reduction, velocity saturation, DIBL, gate current, lateral doping gradient effects, STI stress, etc.) necessary to model present-day and upcoming deep-submicron bulk CMOS technologies. Unlike previous NXP MOS models, the source/drain junction model, c.q. the JUNCAP2 model, is an integrated part of the PSP model.
MOS Model PSP 102.0 is an updated version of PSP 101.0 and contains various improvements. PSP 102.0 includes a local (electrical) model, a global (geometrical) model, and a binning model.
Source Code & Library
The source code (i.e., C-code and Verilog-A code) of MOS Model PSP is available here. The files containing the global, binning, and local model code of level 102 are “device_psp1020.c”, “device_psp1021.c” and “device_psp102e.c” respectively. If you use the included solver, please make sure that you compile on a system that supports Fortran 77.
The source code for MOS Model PSP has been automatically generated from a Verilog-A description of the model.
The history of the source code can be found here.
The models are included in a dynamically loaded library called SiMKit.
SiMKit is related to the following circuit simulators used within NXP:
- Pstar, the circuit simulator from NXP
- Spectre, the circuit simulator from Cadence
- ADS, the circuit simulator from Agilent.
You can read how to download and install the libraries here.
The source code is protected by Copyright © 1991, 2007, NXP.
Additional documentation
Documentation for PSP level 102:
- PSP102_Summary.pdf file (625kB). The parameter extraction methodology is also described in this report. Last update November 2007.
- "From BSIM3/4 to PSP:Translation of flicker noise and junction parameters".
Related Publications
Further information on MOS Model PSP is available in the following related publications:
- "Introduction to PSP MOSFET Model", G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen, Nanotech, 2005.
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