NXP SST Models

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BC847CW

*
.SUBCKT BC847CW 1 2 3 
*
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*
* NXP Semiconductors
*
* General purpose NPN transistor
* Ic   = 100 mA
* Vceo = 45   V 
* hFE  = 520  @ VCE = 5 V;IC = 2 mA (typical)
* 
* Extraction date (week/year): 40/2008 
* Simulator: Spice 3
*
* TOPVIEW: 
*
*          C
*          |
*     _____3_____ 
*    |           |
*    |           |  SOT323
*    |           |
*    |___________|
*       1     2
*       |     |
*       B     E
*
* Diode D1 is dedicated to improve modeling in reverse
* mode of operation and does not reflect a physical device.
*
*
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*
.MODEL MAIN NPN 
+ IS = 2.348E-014 
+ NF = 0.9978 
+ ISE = 1.106E-013 
+ NE = 3.846 
+ BF = 439.2 
+ IKF = 0.04092 
+ VAF = 45 
+ NR = 0.997 
+ ISC = 5.433E-015 
+ NC = 1.162 
+ BR = 15 
+ IKR = 0.01046 
+ VAR = 25 
+ RB = 69.41 
+ IRB = 0.00016 
+ RBM = 1 
+ RE = 0.45 
+ RC = 0.5044 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.12E-011 
+ VJE = 0.6645 
+ MJE = 0.3479 
+ TF = 4.1E-010 
+ XTF = 25 
+ VTF = 2 
+ ITF = 0.18 
+ PTF = 0 
+ CJC = 3.414E-012 
+ VJC = 0.5061 
+ MJC = 0.39 
+ XCJC = 1 
+ TR = 4E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.78 
.MODEL DIODE D 
+ IS = 9.376E-016 
+ N = 0.9515 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 800.2 
+ CJO = 0 
+ VJ = 1 
+ M = 0.5 
+ FC = 0 
+ TT = 0 
+ EG = 1.11 
+ XTI = 3 
.ENDS
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