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NXP RF Field Effect Transistors Models
Please check product availability before design-in
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BF862
VDS=8.001V; VGS=-5E-04V; ID_MAX=25mA
BF862
* BF862 SPICE MODEL MARCH 2007 NXP SEMICONDUCTORS * ENVELOPE SOT23 * JBF862: 1, Drain, 2,Gate, 3,Source Ld 1 4 L= 1.1nH Ls 3 6 L= 1.25nH Lg 2 5 L= 0.78nH Rg 5 7 R= 0.535 Ohm Cds 1 3 C= 0.0001pF Cgs 2 3 C= 1.05pF Cgd 1 2 C= 0.201pF Co 4 6 C= 0.35092pF JBF862 model parameters: .model JBF862 NJF(Beta=47.800E-3 Betatce=-.5 Rd=.8 Rs=7.5000 Lambda=37.300E-3 Vto=-.57093 + Vtotc=-2.0000E-3 Is=424.60E-12 Isr=2.995p N=1 Nr=2 Xti=3 Alpha=-1.0000E-3 + Vk=59.97 Cgd=7.4002E-12 M=.6015 Pb=.5 Fc=.5 Cgs=8.2890E-12 Kf=87.5E-18 + Af=1) ENDS BF862
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BF862
! Filename: BF861B.s2p ! Bias: VDS=8.001V; VGS=-5E-04V; ID_MAX=25mA; VGS_START=0V; ! Company: Philips Semiconductors NL ! User: Q&R DSC-N ! Measure time: 11 Feb 2002 / 16:40:57 # MHz S MA R 50 ! Freq S11 S21 S12 S22 : 10 1.00106 -3.485 2.13335 176.91 0.011259 87.371 0.99916 -1.456 50 0.98607 -17.42 2.07320 164.81 0.054112 78.201 0.97404 -7.252 100 0.94935 -33.96 1.98218 150.90 0.10296 67.865 0.94539 -13.39
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