NXP Complex Discretes Models

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PBLS2022D

*
.SUBCKT PBLS2022D 1 2 3 4 5 6
*
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*
* NXP Semiconducters
*
* 1 Low VCEsat (BISS) Transistor / 1 Resistor-Equipped  
* Transistor in SOT 457 package
*
* TR1       = Low VCEsat Transistor 
* Polarity  = PNP    
* Ic        = 1,8 A
* Vceo      = 20V
* hFE	    = typical 420 @VCE = -2 V;IC = -100 mA
* 
* TR2       = Resistor Equipped Transistor (RET)
* Polarity  = NPN
* Resistors = 4,7kO / 4,7 kO
* Ic        = 100mA
* Vceo      = 50V				
* hFE	    = min 30 @VCE = 5 V;IC = 10 mA
* 
* Extraction date (week/year): 03/09 
* Simulator: Spice 3
*
* TOPVIEW: 
*
*      E1  C1  E2
*      |   |   |
*     _6___5___4_ 
*    |           |
*    |           |  SOT457
*    |           |
*    |___________|
*      1   2   3
*      |   |   |
*      B1  B2  C2
*
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R1 2 22 4.7E+03
Cres1 2 3 4.3E-13 
R21 22 44 2.35E+03
R22 44 4 2.35E+03
Cres2 44 3 1.4E-13
*
Q1 5 1 6 TR1
Q2 3 22 4 TR2 
*
.MODEL TR1 PNP 
+ IS = 5.893E-013 
+ NF = 0.9861 
+ ISE = 1.33E-013 
+ NE = 1.422 
+ BF = 440 
+ IKF = 2.2 
+ VAF = 17.2 
+ NR = 0.9865 
+ ISC = 1.119E-013 
+ NC = 1.166 
+ BR = 290.4 
+ IKR = 0.45 
+ VAR = 11.93 
+ RB = 16 
+ IRB = 0.0004 
+ RBM = 0.3 
+ RE = 0.04 
+ RC = 0.018 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 2.943E-010 
+ VJE = 0.8511 
+ MJE = 0.4203 
+ TF = 1.95E-009 
+ XTF = 3 
+ VTF = 1.5 
+ ITF = 1.5 
+ PTF = 0 
+ CJC = 1.346E-010 
+ VJC = 0.4578 
+ MJC = 0.3404 
+ XCJC = 1 
+ TR = 1E-009 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.75 
*
.MODEL TR2 NPN 
+ IS = 1.822E-14 
+ NF = 0.9932 
+ ISE = 2.894E-16 
+ NE = 1.4 
+ BF = 354.4 
+ IKF = 0.246 
+ VAF = 182 
+ NR = 0.9931 
+ ISC = 9.982E-12 
+ NC = 1.763 
+ BR = 14.99 
+ IKR = 0.05
+ VAR = 17.9 
+ RB = 10 
+ IRB = 5E-06 
+ RBM = 5 
+ RE = 0.649 
+ RC = 1.101 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 1.32E-11 
+ VJE = 0.8401 
+ MJE = 0.3622 
+ TF = 1E-32 
+ XTF = 0 
+ VTF = 1E+03 
+ ITF = 0 
+ PTF = 0 
+ CJC = 3.821E-12 
+ VJC = 0.5986 
+ MJC = 0.3745 
+ XCJC = 0.6193 
+ TR = 1E-32
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.5
.ENDS
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