NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon with the high performance LFPAK package, our new devices provide customers with numerous performance and reliability advantages.
- World's first <1 mΩ (1) 25 V MOSFET in a Power-SO8 footprint
- World's lowest RDS(ON) MOSFET at 30 V (2)
- The only Power-SO8 devices rated to 175 °C
- The only Power-SO8 package automotive rated to AEC - Q101
- The LFPAK is rated for ID(MAX) up to 100 A
- Fully compatible with visual inspection machines (unlike many Power-SO8 alternatives which require X-ray inspection)
- Avalanche rated
- ROHS compliant and halogen-free
- SOT669 and SOT1023 versions
(1) PSMN1R2-25YL has RDS(ON) (typ) = 0.9 mΩ and RDS(ON) (max) = 1.2 mΩ at Vgs=10 V (2) PSMN1R3-30YL has RDS(ON) (typ) = 1.06 mΩ and RDS(ON) (max) = 1.3 mΩ at Vgs=10 V
Related links
- NXP Claims Breakthrough in MOSFET Performance with World’s First Sub 1 MilliOhm MOSFET in a Power S08 Package
- PSMN1R2-25YL
- PSMN1R5-25YL
- PSMN1R3-30YL
- PSMN2R6-40YS
- PSMN4R0-40YS
- PSMN8R3-40YS
- PSMN8R2-80YS
- PSMN013-80YS
- PSMN026-80YS
In addition to the Power-SO8 range we've further extended the range of Trench 6 MOSFETs with ten new devices in the industry-standard TO220 (SOT78) package operating at 30 V, 40 V and 80 V.
Related links
In addition to the Power-SO8 range we've further extended the range of Trench 6 MOSFETs with ten new devices in the industry-standard TO220 (SOT78) package operating at 30 V, 40 V and 80 V.
- NXP Claims Breakthrough in MOSFET Performance with World’s First Sub 1 MilliOhm MOSFET in a Power S08 Package
- PSMN1R6-30PL
- PSMN2R0-30PL
- PSMN4R3-30PL
- PSMN2R2-40PS
- PSMN4R5-40PS
- PSMN8R0-40PS
- PSMN4R4-80PS
- PSMN5R0-80PS
- PSMN012-80PS
- PSMN050-80PS
Regular updates
To keep current with our latest announcements, be sure to sign up for eNews, our customizable electronic newsletter that saves you time by sending you only the information you want.
Follow us