Eindhoven, Netherlands, 2nd March - NXP Semiconductors has launched the complete portfolio of its new 4th generation low V_CEsat (BISS) transistors. The product family comes in two optimized branches - an ultra-low V_CEsat and a high-speed switching branch. They are available in a voltage range from 20 V to 60 V and are housed in small SMD packages SOT23, SOT457, SOT89, SOT223 and SOT96 (SO-8).

Setting a new benchmark for reduced on-state-resistance and keeping switching times to an absolute minimum, these transistors live up to their name as Breakthrough In Small-Signal (BISS) transistors. Transistors from the ultra-low V_CEsat branch enable ultra-low saturation voltage below 50 mV at 1 A. The four new high-speed switching transistors come with reduced switching and storage times down to 125 ns. The new BISS-4 products demonstrate that bipolar transistor technology is an ideal option for switching applications that require higher performance and reduced switching losses.

“By introducing the 4th generation of BISS transistors with its superior low-ohmic substrate technology, NXP is setting the pace in the industry for low V_CEsat transistors in small SMD packages and opening new applications for bipolar transistor technology,” said Frank Thiele, product marketing manager for small-signal transistors, NXP Semiconductors.

The new BISS-4 transistors provide high circuit efficiency, low power losses and generate less heat than standard transistors in the same package. With a DC collector current of 4.3 A (peak I_CM 8 A) in a small SOT23 package, these new products double the performance of former low V_CEsat transistors in SOT23. The new BISS-4 types are designed for loadswitch, switch mode power supply (SMPS) and power management functions in high-volume consumer, communication, computing and automotive applications.

All new single transistors are AEC-Q101 qualified and come in packages that are free of halogens and antimony oxides and comply with non-flammability classification UL 94V-0 and RoHS standards. NXP launched the first BISS transistors family ten years ago and is a leading supplier for these products.

Availability

NXP's new low V_CEsat transistors are ready for ordering. Samples are available immediately for design-in.

Product overview - Ultra-low V_CEsat devices, optimized for load-switch applications

Single transistors

Double transistors

Product overview - Low V_CEsat devices, optimized for high-speed switching applications

Single transistors

Double transistors

Advantages of new low V_CEsat transistors

all types in SOT23