Intermediate level gate drive N-channel enhancement mode Field-Effect Transistors (FETs) in industry-standard packages using advanced TrenchMOS technology. This wide range of devices has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features and benefits

• AEC Q101 compliant
• Low conduction losses due to very low on-state resistance
• Suitable for logic and standard level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating

Applications

• 12 V Automotive systems
• Start-Stop micro-hybrid applications
• Electric and electro-hydraulic power steering
• Motors, lamps and solenoids
• Transmission control

30 V N-channel Automotive TrenchMOS

RDSon [max] @ @ 10V [mΩ]	RDSon [max] @ @ 5V [mΩ]	ID [max] @ @ 25 °C [A]	Rth(j-mb) [max] [K/W]	TO-220 (SOT78A)	I²PAK (SOT226)	D²PAK-7 (SOT427)	D²PAK (SOT404)	DPAK (SOT428)
1		180				BUK6C1R0-30C
1.2		180				BUK6C1R2-30C
1.6	2.5	120	0.49				BUK661R6-30C
1.8		120	0.45				BUK761R8-30C
1.9	2.8	120	0.57				BUK661R8-30C
2.2	3	120	0.45	BUK652R0-30C	BUK6E2R0-30C
2.4	3	120	0.59	BUK652R1-30C
2.8	3.9	100	0.74				BUK662R5-30C
3.3	4.4	100	0.74	BUK652R7-30C
3.5	5.1	100	0.95				BUK663R5-30C
3.8	5.6	100	0.95	BUK653R7-30C
4.5	6	90	0.95					BUK624R5-30C
4.5		75	0.95					BUK724R5-30C
5.2	7.5	81	1.17					BUK6207-30C
9.8	15	46	1.87					BUK6209-30C
14	22	33	2.52					BUK6213-30C

Types in bold red italic underline represent products in development

40 V N-channel Automotive TrenchMOS

RDSon [max] @ @ 10V [mΩ]	RDSon [max] @ @ 5V [mΩ]	ID [max] @ @ 25 °C [A]	Rth(j-mb) [max] [K/W]	TO-220 (SOT78A)	I²PAK (SOT226)	D²PAK-7 (SOT427)	D²PAK (SOT404)	DPAK (SOT428)
1.3		180				BUK6C1R3-40C
1.5		180				BUK6C1R5-40C
1.9	2.6	120	0.45				BUK661R9-40C
2		100	0.45				BUK762R0-40C
2.3	3.1	120	0.45	BUK652R3-40C	BUK6E2R3-40C
2.3		120	0.45	BUK752R3-40C	BUK7E2R3-40C
2.3	3.2	120	0.59				BUK662R4-40C
2.7	3.6	120	0.59	BUK652R6-40C
3.2	4.8	100	0.74				BUK663R2-40C
3.6	5.3	100	0.74	BUK653R4-40C	BUK6E3R4-40C
3.6		100	0.74				BUK763R6-40C
4		100	0.74	BUK754R0-40C
4.6	6.1	80	0.95				BUK664R6-40C
4.8	6.5	88	0.95	BUK654R8-40C
5	6.9	87	0.95					BUK625R0-40C
5		75	0.95					BUK725R0-40C
6.2	8.8	70	1.17					BUK6208-40C
12	16.3	41	1.87					BUK6212-40C
18	23	42	2.52					BUK6218-40C

Types in bold red italic underline represent products in development

55 V N-channel Automotive TrenchMOS

RDSon [max] @ @ 10V [mΩ]	RDSon [max] @ @ 5V [mΩ]	ID [max] @ @ 25 °C [A]	Rth(j-mb) [max] [K/W]	TO-220 (SOT78A)	I²PAK (SOT226)	D²PAK-7 (SOT427)	D²PAK (SOT404)	DPAK (SOT428)
1.8		180				BUK6C1R8-55C
2.1		180				BUK6C2R1-55C
2.7	3.8	120	0.45				BUK663R5-55C
3.2	4.2	120	0.45	BUK653R2-55C	BUK6E3R2-55C
3.9	4.9	120	0.59	BUK653R2-55C			BUK663R5-55C
4.9	6.6	97	0.74				BUK664R4-55C
5.4	7	92.6	0.74	BUK654R6-55C
6.5	8.7	72	0.95				BUK6607-55C
7	9	72	0.95	BUK6507-55C
7.8	10	90	0.95					BUK6207-55C
9.6	13.2	55	1.17					BUK6210-55C
19	24.5;	31	1.87					BUK6217-55C
29	38	22	2.52					BUK6228-55C

Types in bold red italic underline represent products in development

75 V N-channel Automotive TrenchMOS

RDSon [max] @ @ 10V [mΩ]	RDSon [max] @ @ 5V [mΩ]	ID [max] @ @ 25 °C [A]	Rth(j-mb) [max] [K/W]	TO-220 (SOT78A)	I²PAK (SOT226)	D²PAK-7 (SOT427)	D²PAK (SOT404)	DPAK (SOT428)
2.8		180				BUK6C2R8-75C
3.3		180				BUK6C3R3-75C
4	5.3	120	0.45				BUK663R7-75C
4		100	0.45				BUK764R0-75C
4.2	5.3	120	0.45	BUK654R0-75C	BUK6E4R0-75C
4.3		100	0.45	BUK754R3-75C	BUK7E4R3-75C
5	6.3	120	0.59				BUK664R8-75C
5.3	6.5	98	0.59	BUK655R0-75C
7.6	9.1	72	0.74	BUK6507-75C			BUK6607-75C
10.4	12.4	54	0.95	BUK6510-75C			BUK6610-75C
11	13.2	52	0.95					BUK6211-75C
15	18	57	1.17					BUK6215-75C
29	35	23	1.87					BUK6226-75C
46	56	16	2.52					BUK6240-75C

Types in bold red italic underline represent products in development

Related literature

• Leading-edge Automotive Power MOSFETs

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