We've extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in Power SO-8 (LFPAK).

NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon with the high performance LFPAK package, our new devices provide customers with numerous performance and reliability advantages.

• 3.6 mΩ (typical) 60 V in a Power-SO8 footprint (PSMN5R5-60YS)
• 10.0 mΩ (typical) 100 V in a Power-SO8 footprint (PSMN012-100YS)
• World's first <1 mΩ 25 V MOSFET in a Power-SO8 footprint for switching applications
• The only Power-SO8 devices rated to 175 °C
• The only Power-SO8 package automotive rated to AEC - Q101
• The LFPAK is rated for ID(MAX) up to 100 A
• Fully compatible with visual inspection machines (unlike many Power-SO8 alternatives which require X-ray inspection)
• Avalanche rated
• ROHS compliant and halogen-free

Related links

• 25 V to 100 V MOSFETs in Power SO-8
• LFPAK - The Toughest Power SO-8
• PSMN012-60YS
• PSMN5R5-60YS
• PSMN8R5-60YS
• PSMN012-100YS
• PSMN020-100YS

In addition to the new Power SO-8 types we've extended the range of devices available in the industry-standard TO220 (SOT78), operating now at 60 V and 100V adding to the portfolio of 30 V, 40 V and 80 V

• New high-performance Trench 6 MOSFETs in a TO220 package
• PSMN3R0-60PS
• PSMN7R6-60PS
• PSMN013-100PS
• PSMN5R6-100PS
• PSMN7R0-100PS

For more information and to select Power MOSFETs for your application please go to www.nxp.com/mosfets

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