Type number	Package	VDS	RDSon Max(mΩ) Vgs=10v	RDSon Typ (mΩ) Vgs=10v	Qg(tot) Typ nC Vgs=10v
PSMN3R5-30LL	QFN3333	30	3.55	2.9	37
PSMN3R8-30LL	QFN3333	30	3.7	3	38
PSMN5R8-30LL	QFN3333	30	5.8	5	30
PSMN9R0-30LL	QFN3333	30	9	8	20.6
PSMN013-30LL	QFN3333	30	13	11	12.2
PSMN017-30LL	QFN3333	30	17	15	10
PSMN7R0-40LS	QFN3333	40	7	5.6	21.4
PSMN014-60LS	QFN3333	60	14	11	19.6
PSMN023-80LS	QFN3333	80	23	19	21
PSMN035-100LS	QFN3333	100	32	29	23

NXP now offers a range of high-performance MOSFETs rated from 30V to 100V in the QFN3333 package. Measuring only 3.3 mm x 3.3 mm x 1 mm, the devices share the same great switching performance as our Trench 6 LFPAK types but with a 60% smaller footprint. They are ideal for space-constrained designs and high-efficiency power switching applications.

Key benefits

• High efficiencies in power switching applications due to the optimized RDSon and gate charge (Qg) characteristics of Trench 6 technology
• Fast switching - optimized for higher switching frequencies, typically up to 500 KHz
• 1 mm package height for low-profile applications
• Solder die-attach provides superior thermal performance - Rth(j-mb)
• Reduced switching spikes
• Avalanche rated and 100% factory tested to ensure high reliability in your application

Key applications

• DC:DC converters - Point-of-Load modules
• Battery protection - Li-Ion battery packs
• Load switching
• Power ORing
• Voltage regulator modules (VRMs)

Related links

• NXP power switching MOSFETs in compact QFN3333 package

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