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P-channel MOSFETs:	20 V, 3.5 A / 440 mV VF MOSFET-Schottky combination 20 V, 3.5 A / 320 mV VF MOSFET-Schottky combination	20 V, 3.5 A dual P-channel MOSFET
Low VCEsat transistors:	12 V, 6 A NPN low V_CEsat (BISS) transistor 20 V, 6 A NPN low V_CEsat (BISS) transistor 30 V, 3 A NPN low V_CEsat (BISS) transistor 30 V, 6 A NPN low V_CEsat (BISS) transistor 60 V, 6 A NPN low V_CEsat (BISS) transistor 80 V, 5.6 A NPN low V_CEsat (BISS) transistor 100 V, 5.2 A NPN low V_CEsat (BISS) transistor	12 V, 6 A PNP low V_CEsat (BISS) transistor 20 V, 6 A PNP low V_CEsat (BISS) transistor 30 V, 3 A PNP low V_CEsat (BISS) transistor 30 V, 6 A PNP low V_CEsat (BISS) transistor 60 V, 5 A PNP low V_CEsat (BISS) transistor 80 V, 4 A PNP low V_CEsat (BISS) transistor 100 V, 2.7 A PNP low V_CEsat (BISS) transistor
	Click here for the parametric search for low VCEsat transistors in SOT1061
Low VF Schottky rectifiers:	12 V, 6 A NPN low V_CEsat (BISS) transistor 20 V, 6 A NPN low V_CEsat (BISS) transistor 30 V, 3 A NPN low V_CEsat (BISS) transistor 30 V, 6 A NPN low V_CEsat (BISS) transistor 60 V, 6 A NPN low V_CEsat (BISS) transistor	12 V, 6 A NPN low V_CEsat (BISS) transistor 20 V, 6 A NPN low V_CEsat (BISS) transistor 30 V, 3 A NPN low V_CEsat (BISS) transistor 30 V, 6 A NPN low V_CEsat (BISS) transistor
	Click here for the parametric search for low VF Schottky rectifiers in SOT1061

 

New leadless powerhouse SOT1061/SOT1118

 

NXP is now offering low V_CEsat transistors, low V_F Schottky rectifiers as well as P-channel dual MOSFETs and MOSFET-Schottky combinations in the small leadless medium-power SMD packages SOT1061 and SOT1118. The 3-pin and 6-pin packages measure only 2 x 2 x 0.65 mm and offer an increased lifetime with an exposed heat sink for excellent thermal and electrical performance (P_tot > 1 W).

They enable a high integration of functions on a very small footprint - perfect for today's thin and small applications. Functions housed in SOT1061 and SOT1118 are well suited managing power in portable devices, especially in designs that use portable lithium-ion battery-charging circuits.

Key benefits of the new leadless packages:

• small package size only 0.65 mm high, enabling a higher integration for smaller designs
• energy savings
• similar performance as other medium power packages, such as SOT89 (SC-62) and SOT457 (SC-74), on a much smaller footprint.

view package outline view reflow soldering print	view package outline view reflow soldering print

Product benefits

Highlights P-channel MOSFETs

• ESD protected MOSFET of >1 KV HBM
• Very low R_DSon of <70 mΩ at V_GS = 4.5 V
• 1.8 V R_DSon rating for operation at low voltage gate drive levels
• Schottky V_F typical of 455 mV and 325 mV
• Best-in-class thermal performance due to extra heatsink

Highlights low V_CEsat (BISS) transistors

• DC collector current of up to 6 A (peak I_CM = 7 A)
• Ultra-low saturation voltage V_CEsat down to 200 mV at 6 A collector current I_C
• Ultra-low saturation resistance R_CEsat of only 33 mΩ
• Full range of voltages from 12 to 100 V

Highlights low V_F Schottky rectifiers

• High forward-current capability with low forward voltage drop (V_F max of 470 V @ I_F = 2 A)
• Integrated guard ring for stress protection (high performance and efficiency)
• AEC-Q101-qualified

Key applications

• Portable devices
• Power management
• Load switches, battery chargers, DC/DC converters
• LED driver circuits in LCD backlight units
• Switch Mode Power Supply (SMPS)

Related links

• Leaflet NXP leadless 2 x 2 mm SOT1061 and SOT1118 packages
• SOT1061 package information page
• SOT1118 package information page
• Press release about new portfolio

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