NXP Semiconductors has just released the PMT200EN and PMT760EN, two new 100 V N-channel small-signal MOSFETs in SMD plastic package SOT223. Using the latest Trench technology, these products feature low RDSon with high ID max. current, low QG and low switching times for fast switching performance.
The two MOSFETS are part of our extensive portfolio of recently released, small-signal MOSFETs in small and medium-power packages. The portfolio contains P- and N-channel types from 12 to 300 V with very low RDSON values, automotive qualified and ESD protected types. Visit our dedicated campaign page for more details, and order your samples today.
Key technical features
|VDS max [V]||100||100|
|VGS max [V]||20||20|
|VGSth range [V]||1.3 - 2.5||1.3 - 2.5|
|RDSon typ @ 4.5 V||190 mOhm||760 mOhm|
|QG typ [nC]||7.4||2.4|
|ton (=tr+tdon) [ns]||9||6|
|toff (=tf+tdoff) [ns]||14||11|
- Relay driver
- LED backlight driver
- Low-side loadswitch
- Switching circuits