New 2x2 DFN MOSFETs with solderable side pads

June 14, 2012

NXP now offers the industry’s first MOSFETs in a 2x2 mm DFN package with tin-plated and 100 % solderable side pads. This makes soldering inspection much easier and improves mechanical robustness. The 30 V low RDSon N-channel MOSFETs in DFN2020MD-6 with a maximum drain current (ID) of 13 A give you the best power and thermal performance – similar to SO8. They are ideal for ultra-small load switches, power conversion and charger switches in small, thin applications such as smart phones and tablets where it is all about power density and efficiency.

With a portfolio of more than 60 MOSFETs in 2x2 mm and 1x0.6 mm DFN packages, NXP is a major player in MOSFETs addressing requirements for lowest RDSon on smallest footprint.

Download the datasheets

PMPB11EN - Nch 30 V VDS, 20 V VGS, 12 mOhm typ RDSon at 10 V
PMPB20EN - Nch 30 V VDS, 20 V VGS, 16.5 mOhm typ RDSon at 10 V

Key features and benefits

  • Tin-plated solderable side pads for easy visual inspection and higher ruggedness
  • Best-in-class low RDSon for reduced conduction losses translating into lower power consumption and longer battery life
  • Best-in-class thermal performance on a small mounting area
  • With only 0.6 mm height thinner than most competitor offerings
  • Allows designers to replace products in larger packages (SO8, SOT457, 3x3, TSSOP8)

Key applications

  • Portable and ultra portable applications like tablet PCs, cellular handsets incl. smartphones, camcorders, digital still cameras, MP3 player, eReaders, wireless inductive chargers, Notebook PCs, ultrabooks and eBooks
  • Non portable but space constrained applications like DC motors, Server and Netcom equipment, and LED lighting

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