NextPowerS3 first to deliver integrated Schottky performance with low leakage current
Welcome to NextPowerS3, a new high-performance 30 V MOSFET platform incorporating NXP’s unique “SchottkyPlus” technology. NextPowerS3 is the industry’s first MOSFET to deliver the high frequency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
The trend in recent years has been to create faster and faster switching MOSFETs in an effort to reduce switching losses and increase the efficiency of switch mode power supply (SMPS) designs. However, faster switching on its own can generate problems in terms of switch node voltage spikes, coupled gate glitches and the potential for shoot-through, raising EMI and reliability concerns. One popular solution has been to integrate Schottky and Schottky-like diodes into MOSFET structures in order to minimize reverse-recovery losses.
However, Schottky diodes introduce high leakage currents, especially at elevated temperatures, which impact efficiency, battery life and the ability to screen for defects in the manufacturing process. Combining superfast switching with soft recovery, NXP’s NextPowerS3 range addresses each of these concerns, delivering increased efficiency and higher power density, while keeping voltage spikes under control and limiting leakage current to less than 1 µA.
NextPowerS3 30 V is suitable for a variety of applications, including high efficiency power supplies for telecoms and cloud computing, high performance portable computing and battery-powered motor control, such as rechargeable power tools.
Features and benefits
- High system efficiency through ultra low Qg, Qgd and Coss
- Reduced switch-node voltage spikes; EMI friendly
- Unique SchottkyPlus technology; integrated Schottky performance without high leakage current
- No wire bonds, no glue; qualified to 175 °C