NXP Semiconductors, the independent company founded by Philips, today introduced the first of a series of silicon-based discrete solutions, with the release of the BFU725F microwave NPN transistor. The BFU725F features an impressive blend of high switching frequency, high-gain and very low noise that make it an ideal solution for a variety of RF applications. The ultra-low noise figure improves the reception of the sensitive RF receivers found in various wireless devices, such as GPS systems, DECT phones, satellite radio, WLAN / CDMA applications, while the high cut-off frequency is ideally suited to meet the needs of applications that operate in the 10 GHz to 30 GHz range, like satellite low noise blocks.

Developed to address both the performance needs of today’s devices and the cost concerns of producers, the BFU725F transistor was developed using NXP’s proven silicon germanium carbon (SiGeC) process technology for discrete components, the same process used to develop monolithic ICs and wideband transistors.

“We selected NXP’s SiGeC BiCMOS technology, because the end result is a combination of power gain and excellent dynamic range for a cost-effective silicon discrete,” said Mr. Bruce Bruchan, director of engineering satellite products, CalAmp Corp. “NXP’s continued development of products produced with SiGeC BiCMOS, demonstrates their commitment to their customers by continually innovating in response to increasing market needs in the fast moving microwave and wireless markets.”

Other solutions already on the market include the TFF1004HN, a highly integrated IC for satellite LNBs and the BFU725F microwave transistor, NXP is developing several more silicon-based wideband transistors and MMICs due out later this year and in early 2008.

“QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range,” said Prof. Bart Smolders, Innovation Manager, NXP Semiconductors. “The idea is to have a silicon-based process with the performance of gallium-arsenide (GaAs) technologies, so we can provide cost-effective integrated high frequency solutions.”

The BFU725F is RoHS compliant and permits very low noise (0.43 dB at 1.8 GHz / 0.7 dB at 5.8 GHz) and high maximum stable gain (27 dB at 1.8 GHz / 10 dB at 18 GHz). Unique features include high switching frequency fT 70 GHz and packaging in a plastic surface-mount package SOT343F.

Availability

NXP’s BFU725F microwave transistor is available now shipping in high volumes.

About NXP

NXP is a top 10 semiconductor company founded by Philips more than 50 years ago. Headquartered in Europe, the company has 37,000 employees working in more than 20 countries and posted sales of EUR 5 billion in 2006. NXP creates semiconductors, system solutions and software that deliver better sensory experiences in mobile phones, personal media players, TVs, set-top boxes, identification applications, cars and a wide range of other electronic devices. News from NXP is located at www.nxp.com.