Eindhoven, Netherlands and Hamburg, Germany, June 14, 2011 – NXP Semiconductors N.V. (NASDAQ: NXPI) today announced a new family of small-signal MOSFETs delivering breakthrough low RDS(on) performance. The low RDS(on) P-Channel and N-Channel MOSFETs enable lower power consumption for consumer electronics applications such as notebooks, tablets, handsets, e-readers, set-top-boxes and LCD TVs. These high-efficiency MOSFETs are available in high-volume SOT23 and SOT457 packages with a compact 3-mm x 3-mm footprint, allowing design engineers to replace larger package types with significantly smaller solutions offering similar or better on-resistance.
Facts / Highlights:
- The PMV16UN, one of the new N-Channel MOSFETs from NXP, delivers an ultra-low RDS(on) value of (18 mOhm max @VGS = 4.5 V) in SOT23.
- NXP’s latest portfolio of small-signal MOSFETs offers a 20-percent increase in power efficiency compared to previous Trench MOSFET generation types.
- Parts are available immediately for US $1.20 in units of 1,000.
- A total of 70 types of small-signal MOSFETs will be released in 2011.
- “Our new small-signal MOSFETs have set new benchmarks in low on-state resistance in SOT23, enabling higher efficiency in much smaller form factors in an increasingly competitive consumer electronics market,” said Jens Schnepel, product marketing manager, transistors, NXP Semiconductors.
- NXP Small-Signal MOSFET Portfolio
- Low RDSon P-channel MOSFETs: PMV32UP, PMN34UP
- Low RDSon N-channel MOSFETs: PMV16UN, PMV22EN, PMV20XN, PMN20EN
NXP Semiconductors N.V. (NASDAQ: NXPI) provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. These innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. A global semiconductor company with operations in more than 25 countries, NXP posted revenue of $4.4 billion in 2010.