SOT1787-1: CFM4F

Overview

CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm body

Package Version	Package Name	Mount	Terminal Position	Package Style	Dimensions	Termination Count	Material
SOT1787-1	CFM4F	flange mount	double	CFM	10.16 x 41.15 x 4.575	4	ceramic

Manufacture Code	Reference Codes	Issue Date
98ASB16977C		2019-10-25

Products

Part	Description	Quick access
MMRF1317H	RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V	View parametrics
MMRF1314H	RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V	View parametrics
MMRF1308H	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V	View parametrics
MRFE6VP61K25H	Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V	View parametrics
MRFE6VP5600H	Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V	View parametrics
MRF1K50H	Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V	View parametrics
MMRF1050H	Airfast RF Power LDMOS Transistor, 1050 W Peak over 850-950 MHz, 50 V	View parametrics
MRFX1K80H	Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V	View parametrics
MRF13750H	RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V	View parametrics
AFV141KH	Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V	View parametrics
AFV121KH	Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V	View parametrics
MRF8P29300H	Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V	View parametrics
MMRF1312H	RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V	View parametrics
MRFE8VP8600H	140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor	View parametrics