SOT883B

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm


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Package VersionPackage NamePackage DescriptionReference CodesIssue Date
SOT883BDFN1006B-3Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm2011-06-30

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Products in this package

Automotive

Type numberDescriptionQuick access
BC846BMB65 V, 100 mA NPN general-purpose transistor
BC847BMB45 V, 100 mA NPN general-purpose transistors
BC857BMB45 V, 100 mA PNP general-purpose transistors
PBSS2515MB15 V, 0.5 A NPN low VCEsat (BISS) transistor
PDTC114EMBNPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

Bipolar transistors

Type numberDescriptionQuick access
2PA1774QMB40 V, 100 mA PNP general-purpose transistors
2PA1774RMB40 V, 100 mA PNP general-purpose transistors
2PA1774SMB40 V, 100 mA PNP general-purpose transistors
2PC4617QMB50 V, 100 mA NPN general-purpose transistors
2PC4617RMB50 V, 100 mA NPN general-purpose transistors
BC846BMB65 V, 100 mA NPN general-purpose transistor
BC847AMB45 V, 100 mA NPN general-purpose transistors
BC847BMB45 V, 100 mA NPN general-purpose transistors
BC847CMB45 V, 100 mA NPN general-purpose transistors
BC857AMB45 V, 100 mA PNP general-purpose transistors
BC857BMB45 V, 100 mA PNP general-purpose transistors
BC857CMB45 V, 100 mA PNP general-purpose transistors
PBSS2515MB15 V, 0.5 A NPN low VCEsat (BISS) transistor
PBSS2540MB40 V, 0.5 A NPN low VCEsat (BISS) transistor
PBSS3515MB15 V, 0.5 A PNP low VCEsat (BISS) transistor
PBSS3540MB40 V, 0.5 A PNP low VCEsat (BISS) transistor
PDTA113EMBPNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
PDTA113ZMBPNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
PDTA114EMBPNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
PDTA114TMBPNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open
PDTA114YMBPNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
PDTA115EMBPNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
PDTA115TMBPNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open
PDTA123EMBPNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTA123JMBPNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTA123TMBPNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
PDTA123YMBPNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
PDTA124EMBPNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
PDTA124TMBPNP resistor-equipped transistor; R1 = 22 kΩ, R2 = open
PDTA124XMBPNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ
PDTA143EMBPNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ
PDTA143TMBPNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
PDTA143XMBPNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA143ZMBPNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PDTA144EMBPNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
PDTA144TMBPNP resistor-equipped transistor; R1 = 47 kΩ, R2 = open
PDTA144VMBPNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ
PDTA144WMBPNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ
PDTC114EMBNPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
PDTC114TMBNPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open
PDTC114YMBNPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
PDTC115EMBNPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
PDTC115TMBNPN resistor-equipped transistor; R1 = 100 kΩ, R2 = open
PDTC123EMBNPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123JMBNPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC123TMBNPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
PDTC123YMBNPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
PDTC124EMBNPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
PDTC124TMBNPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open
PDTC124XMBNPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ
PDTC143EMBNPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ
PDTC143TMBNPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open
PDTC143XMBNPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ
PDTC143ZMBNPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
PDTC144EMBNPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
PDTC144TMBNPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open
PDTC144VMBNPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 10 kΩ
PDTC144WMBNPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ
PMBT3904MB40 V, 200 mA NPN switching transistor
PMBT3906MB40 V, 200 mA PNP switching transistor

ESD, EMI and signal conditioning

Type numberDescriptionQuick access
PESD5V0L2UMBLow capacitance unidirectional double ESD protection array
PESD5V0U2BMBUltra low capacitance bidirectional double ESD protection array

MOSFETs

Type numberDescriptionQuick access
2N7002BKMB60 V, single N-channel Trench MOSFET
BSS84AKMB50 V, single P-channel Trench MOSFET
NX3008NBKMB30 V, single N-channel Trench MOSFET
NX3008PBKMB30 V, single P-channel Trench MOSFET
PMZB290UN20 V, single N-channel Trench MOSFET
PMZB290UNE20 V, single N-channel Trench MOSFET
PMZB300XN20 V, single N-channel Trench MOSFET
PMZB350UPE20 V, single P-channel Trench MOSFET
PMZB370UNE30 V, single N-channel Trench MOSFET
PMZB380XN30 V, single N-channel Trench MOSFET
PMZB420UN30 V, single N-channel Trench MOSFET
PMZB670UPE20 V, single P-channel Trench MOSFET
PMZB790SN60 V, single N-channel Trench MOSFET

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