We offer a complete line-up of RF power transistors operating from 450 MHz right up to 3.8 GHz, covering all cellular technologies GSM/EDGE, CDMA, TD-SCDMA, WCDMA, LTE and WiMAX infrastructures. The latest 2- and 3-way Doherty designs are helping drive efficiency way beyond 40% in base stations for WiMAX, LTE, WCDMA, and TD-SCDMA, which use large peak to average ratio (PAR) signals.
From the outside, these devices look like an ordinary transistor. In fact, they are integrated Doherty amplifiers that deliver the highest efficiency levels for base station applications. They are just as easy to design-in as standard class AB transistors, so they also provide significant space and cost savings.
NXP® recently announced the 8th generation of its RF power device portfolio for base stations. Listening carefully to the world’s leading infrastructure providers and understanding their requirements, a holistic approach was taken during the development of Gen8. This basically means that we scrutinized every little detail of a power transistor and reconsidered the entire “transistor system” to come up with a new generation, which performs markedly better than its predecessors and again sets standards for the industry. Gen 8 clearly addresses the key trends in the wireless infrastructure industry: increased output power, higher efficiency, increased signal bandwidth, smaller form factors, and higher cost sensitivity.
NXP currently develops a complete line of overmolded plastic (OMP) RF power transistors and MMICs with peak powers ranging from 2.5 to 200 Watts. The main benefit of plastic packages is cost effectiveness with little or no impact on performance. The range of plastic devices will complement the extensive range of RF power products NXP offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.
The devices in the signal path between the DACs and the high power PA as well as in the signal path between the antenna and the ADCs are referred to as “small signal” devices.
The LNAs of the BGU705x series provide low noise figure (NF) of 0.6 dB and high linearity output third-order intercept point of 30 dBm. This family of pin-compatible products is internally matched with 50Ohms, has high input return loss and is designed to operate between 500 MHz and 3800 MHz. The products are ESD protected on all terminals, and housed in HVSON10 leadless packages. Compared to GaAs based discrete equivalents they offer lower DC power consumption, high immunity to high input level signals, better spurious emission performance, and increased output power.
Manufactured in NXP’s innovative QUBiC4 process, these VGAs deliver more on-chip functionality in less space, and meet the most demanding requirements for system performance.
NXP’s medium power (20-30dBm) gain blocks are designed to deliver high efficiency without compromising linearity. Along with improved thermal performance and ESD robustness, the QUBiC4 process enables features such as active biasing, quiescent current adjustment, flexible VGA interfaces, and power-saving shutdown modes. To save space, NXP’s medium power amplifier MMICs are available in the smallest package size (3 x 3 mm) as well as in leadless options and SOT-89 packages.
The BGX71xx* series IQ modulator, BGU72xx* series dual down mixer, and the BGU73xx* LO-synthesizer completes the RF small signal product portfolio
|400 MHz to 2750 MHz high linearity variable gain amplifier|
|Medium Power Amplifiers|
|LNAs for Wireless Infrastructures|
|50 MHz to 250 MHz high linearity Si variable gain amplifier; 24 dB gain range|
|50 MHz to 500 MHz high linearity Si variable gain amplifier; 28 dB gain range|
|Tower® Mounted Amplifier|