NXP Semiconductors


Select site:

English

2PD2150

Selection guide

Datasheet

2PD2150
(Product Specification)
02-Jan-07, 13 pages, 124 kB

Download all documentation

2PD2150 - 20 V, 3 A NPN low VCEsat (BISS) transistor

General description
Features
Products/packages
Quality/reliability/chemical content
Pricing/ordering/availability
Samples
Discontinued information
Applications
Block diagrams/pinning
Design support
Parametrics/similar products
Print/email
Disclaimers
All information hereunder is subject to the subsequent disclaimers

General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: 2PB1424.

Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Products/packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingECCN
2PD21502PD2150,1159340 592 92115Volume productionSOT89Tape reel smdStandard Marking

Quality/reliability/chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree Conversion dateRHFIRF (FIT)MTBF (hours)MSL
2PD21502PD2150,1152PD2150
Always Pb-free

Quality and reliability disclaimer

Pricing/ordering/availability

Type numberOrdering code(12NC)Orderable part numberIndicative price/unit($)RegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
2PD21509340 592 92115  2PD2150,115        Order samples

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Power switches (e.g. motors, fans)
  • Thin Film Transistor (TFT) backlight inverter


Related applications
LCD TV - MMS functionality
Set-top box - MMS functionality

Block diagrams/pinning

Design support

Support Documents

Support Models