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Datasheet

BFG10W/X
(Product Specification)
22-Sep-95, 9 pages, 48 kB

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General description

NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.

Features

  • High efficiency
  • Small size discrete power amplifier
  • 900 MHz and 1.9 GHz operating areas
  • Gold metallization ensures excellent reliability.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BFG10W/XBFG10W/X T/R9340 365 90115Volume productionSOT343N
(SO4)
Tape reel smdStandard MarkingBFG10W/X
week 52, 2002

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BFG10W/X9340 365  90115  0.6500      Order samples

Applications

  • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.


Related applications
Transceiver board

Technical documents

Support Models

Parametrics/similar products

Type numberPackageIC(mA)POLARITYPTOT(mW)GUM @f1(dB)@f1MIN.
POWER
GAIN(dB)
VCEO max(V)Frequency(MHz)telecom system
BFG10W/XSOT343N
(SO4)
250NPN400719001010900digital cellular/cordless

Similar products

BFG10W/X links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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