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Datasheet

BFG480W
(Product Specification)
21-Oct-98, 16 pages, 122 kB

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General description

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.

Features

  • High power gain
  • High efficiency
  • Low noise figure
  • High transition frequency
  • Emitter is thermal lead
  • Low feedback capacitance
  • Linear and non-linear operation.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BFG480WBFG480W T/R9340 550 55115Volume productionSOT343R
(CMPAK-4)
Tape reel smdStandard MarkingNot available
week 52, 2003

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BFG480W9340 550  55115  0.4500NAAVNET ELECTRONICS MARKETING3,0009/5/2008 Buy online Order samples
   NADIGI-KEY CORPORATION15,0009/6/2008 Buy online  
   NADIGI-KEY CORPORATION4329/6/2008 Buy online  
   NAMOUSER ELECTRONICS2,0789/5/2008 Buy online  

Applications

  • RF front end with high linearity system demands (CDMA)
  • Common emitter class AB driver.


Related applications
Transceiver board

Parametrics/similar products

Type numberPackageVCE(V)IC(mA)NOISE
FIGURE
MAX(dB)
PL(W)POLARITYPTOT(mW)fT(GHz)ITO(dBm)@IC(mA)SocketGain
@1.9 Ghz(dB)
@f1@f2VCEO max(V)
BFG480WSOT343R
(CMPAK-4)
2 250 1.8@f2
1.2@f1
20 NPN 360 21 28 80 LNA 16@f2 900 2000 4.5

Similar products

BFG480W links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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