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Datasheet

BFT25
(Product Specification)
01-Nov-92, 8 pages, 51 kB

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General description

NPN transistor in a plastic SOT23 envelope.

It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.

Features

  • High power gain
  • Low noise figure
  • High transition frequency
  • Gold metallization ensures excellent reliability
  • SOT323 envelope.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BFT25BFT25 T/R9332 227 00215Volume productionSOT23
(TO-236AB)
Tape reel smdStandard MarkingBFT25
week 34, 2003

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BFT259332 227  00215  0.2600      Order samples

Applications

  • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.


Related applications
Transceiver board

Technical documents

Support Models

Parametrics/similar products

Type numberPackageIC(mA)NOISE
FIGURE
MAX(dB)
POLARITYPTOT(mW)fT(GHz)@f(MHz)GUM @f1(dB)GUM @f2(dB)@f1@f2VCEO max(V)Frequency(MHz)
BFT25SOT23
(TO-236AB)
6.53.8@f1NPN302.3500181250080053.8

Similar products

BFT25 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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