BFU725F

General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.

Features

• Low noise high gain microwave transistor
• Noise figure (NF) = 0.7 dB at 5.8 GHz
• High maximum stable gain 27 dB at 1.8 GHz
• 110 GHz f_T silicon germanium technology

Products/packages

Type number	North American Type number	Ordering code (12NC)	Product status	Package	Packing	Marking	Chemical content	Leadfree conversion date
BFU725F	BFU725F T/R	9340 611 42115	Volume production	SOT343	Reel Pack, SMD	Standard Marking	Not available

Pricing/ordering/availability

Type number	Ordering code(12NC)	Indicative price/unit($)	Region	Distributor	In stock	Inventory date	Buy online	Samples
BFU725F	9340 611  42115		NA	MOUSER ELECTRONICS	2,450	9/30/2008	Buy online	Order samples

Applications

• 2nd LNA stage and mixer stage in DBS LNBs
• Satellite radio
• Low noise amplifiers for microwave communications systems
• WLAN and CDMA applications
• Analog/digital cordless applications
• Ka band oscillators DROs

Related applications
Transceiver board

Parametrics/similar products

Type number	Package	VCE(V)	IC(mA)	PL(W)	POLARITY	fT(GHz)	@f(MHz)	ITO(dBm)	@IC(mA)	Socket	@f2	VCEO max(V)	Frequency(MHz)
BFU725F	SOT343	2	40	8	NPN	70	2400	19	40	LNA	5800	2.9	0.7

Similar products

BFU725F links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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