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Datasheet

BGF944
(Product Specification)
06-Jun-03, 12 pages, 92 kB

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General description

17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band.

Features

  • Typical GSM EDGE performance at a supply voltage of 26 V:
    • Output power = 2.5 W
    • Gain = 29 dB
    • Efficiency = 15pct
    • ACPR < -65 dBc at 400 kHz
    • rms EVM < 0.4pct
    • peak EVM < 1.2pct
  • Low distortion to a GSM EDGE signal
  • Excellent 2-tone performance
  • Low die temperature due to copper flange
  • Integrated temperature compensated bias
  • 50 Ohm input/output impedance
  • Flat gain over frequency band.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BGF944BGF9449340 566 89127Volume productionSOT365CTube packStandard MarkingNot available

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BGF9449340 566  89127        Order samples

Applications

  • Base station RF power amplifiers in the 920 to 960 MHz frequency band
  • GSM, GSM EDGE, multi carrier applications
  • Macrocell (driver stage) and Microcell (final stage).


Related applications
Power amplifier board

Parametrics/similar products

Type numberPackageDescriptionPOWER
GAIN(dB)
ApplicationEfficiency(%)LOAD
POWER(W)
Frequency(MHz)Operating voltage(VDC)
BGF944SOT365C
Basestation LDMOS RF POWER Module30EDGE Driver Module50@CW
16@EDGE
17 (CW) / 2.5 (avg EDGE)920 - 96026

Similar products

BGF944 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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