NXP Semiconductors


Select site:

English

Datasheet

BLA1011-10
(Product Specification)
19-Nov-03, 9 pages, 73 kB

Download all documentation

General description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.

Features

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BLA1011-10BLA1011-109340 568 36112Volume productionSOT467C
(LDMOST)
Blister packStandard MarkingNot available
Always Pb-free

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BLA1011-109340 568  36112  NAAVNET ELECTRONICS MARKETING5911/21/2008 Buy online Order samples
   NAFUTURE ELECTRONICS- NORTH AMER1211/21/2008 Buy online  

Applications

  • Avionics transmitter applications in the 1030 to 1090 MHz frequency range.

Parametrics/similar products

Type numberPackageDescriptionPOWER
GAIN(dB)
ApplicationEfficiency(%)LOAD
POWER(W)
tp(us)Frequency(MHz)Operating voltage(VDC)Duty cycle(%)
BLA1011-10SOT467C
(LDMOST)
Avionics LDMOS RF POWER Transistor18Avionics - TCAS, IFF, Mod-S5010501030 - 1090361

Similar products

BLA1011-10 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

Disclaimer

The information published on product information pages of the www.nxp.com or www.semiconductors.com websites is an extract from product data sheets and is for information purposes only. For detailed information please check the most recent version of the relevant product data sheet as published on these websites. In the event of any conflict between product information pages and data sheets or deviations from information provided in the product data sheets on these product information pages, the information provided in the product data sheets shall prevail.


The product status of the product(s) described in the product data sheet may have changed since publication of the data sheet and therefore information in datasheets on product status may be outdated. The latest information on product status is published on the product information pages of the above-mentioned websites.


As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below.


http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (e-mail)

The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved.-


If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding.