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Datasheet

BLF175
(Product Specification)
22-Jul-03, 21 pages, 133 kB

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General description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range.

The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information.

Features

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures
  • excellent reliability.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BLF175BLF1759339 397 80112Volume productionSOT123ABlister packStandard MarkingNot available
Always Pb-free

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BLF1759339 397  80112  NADIGI-KEY CORPORATION14211/22/2008 Buy online Order samples
   EUFARNELL2711/21/2008 Buy online  
   NAFUTURE ELECTRONICS- NORTH AMER15111/21/2008 Buy online  
   NAMOUSER ELECTRONICS611/22/2008 Buy online  
   NANEWARK2711/21/2008 Buy online  

Block diagrams/pinning

Parametrics/similar products

Type numberPackageDescriptionPOWER
GAIN(dB)
ApplicationEfficiency(%)LOAD
POWER(W)
Frequency(MHz)Operating voltage(VDC)
BLF175SOT123A
VHF VDMOS RF POWER Transistor20Broadcast and VHF Communication transmitters653028 - 10850

Similar products

BLF175 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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