NXP Semiconductors


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Datasheet

BLF177
(Product Specification)
24-Jan-07, 19 pages, 315 kB

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General description

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange.

A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook 'General' section for further information.

Features

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

Products/packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingECCN
BLF177BLF177,1129339 300 10112Volume productionSOT121B
(CRFM4)
Blister packStandard Marking

Quality/reliability/chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree Conversion dateRHFIRF (FIT)MTBF (hours)MSL
BLF177BLF177,112Not available
Always Pb-free

Quality and reliability disclaimer

Pricing/ordering/availability

Type numberOrdering code(12NC)Orderable part numberIndicative price/unit($)RegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF1779339 300 10112  BLF177,112  NANEWARK8 11/20/2009Buy onlineOrder samples
    NADIGI-KEY CORPORATION429 11/20/2009Buy online 

Applications

  • Designed for industrial and military applications in the HF/VHF frequency range.

Block diagrams/pinning

Parametrics/similar products

Type numberPackage?D(%)
BLF177SOT121B
(CRFM4)
40


Similar products
BLF177 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.