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Datasheet

BLF1822-10
(Product Specification)
10-Feb-03, 16 pages, 157 kB

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General description

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

Features

  • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA:
    • Output power = 10 W (PEP)
    • Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
    • Efficiency = 39pct at 900 MHz, 34pct at 2200 MHz
    • dim = -31 dBc at 900 MHz, -28 dBc at 2200 MHz
  • Easy power control
  • Excellent ruggedness
  • High power gain
  • Excellent thermal stability
  • Designed for broadband operation (HF to 2200 MHz)
  • No internal matching for broadband operation.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BLF1822-109340 565 82112Volume productionSOT467C
(LDMOST)
Blister packStandard MarkingNot available
Always Pb-free

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BLF1822-109340 565  82112        Order samples

Applications

  • RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range
  • Broadcast drivers.


Related applications
Power amplifier board

Parametrics/similar products

Type numberPackageDescriptionPOWER
GAIN(dB)
ApplicationEfficiency(%)LOAD
POWER(W)
Frequency(MHz)Operating voltage(VDC)
BLF1822-10SOT467C
(LDMOST)
Basestation LDMOS RF POWER Transistor13W-CDMA, CDMA and Broadcast drivers40@CW12 (CW)0 - 220026

Similar products

BLF1822-10 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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