This device has been transferred from Ampleon to Rochester Electronics.

HF-VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Features and benefits

  • High power gain
  • Low noise
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures excellent reliability

Applications

  • Transmitter applications in the HF/VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 25 200 MHz
PL(1dB) nominal output power at 1 dB gain compression 5 W
Test signal: CW
Gp power gain PL = 5 W; VDS = 28 V 13 16 dB
ηD drain efficiency PL = 5 W; VDS = 28 V; f = 175 MHz; IDq = 10 mA 50 60 %
PL output power 5 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF242 CRFM4
(SOT123A)
sot123a_po Bulk Pack Transferred Standard Marking BLF242,112
(9338 170 30112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S souce
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF242 9338 170 30112 BLF242,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF242 9338 170 30112 BLF242,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF242 14V 10mA S-parameter Data S-parameter 2012-06-08
BLF242 28V 10mA S-parameter Data S-parameter 2012-06-08