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Datasheet

BLF245B
(Product Specification)
04-Aug-03, 14 pages, 96 kB

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General description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT279A balanced flange package, with a ceramic cap. The mounting flange provides the common source connection for the transistors.

Features

  • High power gain
  • Easy power control
  • Good thermal stability
  • Gold metallization ensures excellent reliability.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BLF245BBLF245B9340 035 20112Volume productionSOT279A
(CDFM4)
Blister packStandard MarkingNot available
Always Pb-free

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BLF245B9340 035  20112  NAAVNET ELECTRONICS MARKETING1811/21/2008 Buy online Order samples
   NADIGI-KEY CORPORATION1711/22/2008 Buy online  
   NAMOUSER ELECTRONICS211/22/2008 Buy online  

Block diagrams/pinning

Parametrics/similar products

Type numberPackageDescriptionPOWER
GAIN(dB)
ApplicationEfficiency(%)LOAD
POWER(W)
Frequency(MHz)Operating voltage(VDC)
BLF245BSOT279A
(CDFM4)
VHF VDMOS RF POWER Transistor18Broadcast and VHF Communication transmitters653017528

Similar products

BLF245B links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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