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Datasheet

BLF246
(Product Specification)
05-Aug-03, 15 pages, 93 kB

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General description

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the ?General? section of the handbook for further information.

Features

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

Products/packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingECCN
BLF246BLF246,1129339 299 90112Volume productionSOT121B
(CRFM4)
Blister packStandard Marking

Quality/reliability/chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree Conversion dateRHFIRF (FIT)MTBF (hours)MSL
BLF246BLF246,112Not available
Always Pb-free

Quality and reliability disclaimer

Pricing/ordering/availability

Type numberOrdering code(12NC)Orderable part numberIndicative price/unit($)RegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF2469339 299 90112  BLF246,112        Order samples

Applications

  • Large signal amplifier applications in the VHF frequency range.

Block diagrams/pinning

Parametrics/similar products

Type numberPackageDescriptionproduct application descriptionfrange(MHz)PL(W)?D(%)Gp(dB)VDS(V)
BLF246SOT121B
(CRFM4)
VHF power MOS transistorLarge signal amplifier applications in the VHF frequency range10880551628


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