NXP Semiconductors


Select site:

English

BLF4G10-120; BLF4G10S-120

Selection guide

Datasheet

BLF4G10-120; BLF4G10S-120
(Product Specification)
10-Jan-06, 14 pages, 120 kB

Download all documentation

BLF4G10-120; BLF4G10S-120 - UHF power LDMOS transistor

General description
Features
Products/packages
Quality/reliability/chemical content
Pricing/ordering/availability
Samples
Discontinued information
Applications
Block diagrams/pinning
Design support
Parametrics/similar products
Print/email
Disclaimers
This product has been discontinued. Click here for discontinued information.All information hereunder is subject to the subsequent disclaimers

General description

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

Features

  • Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA:
    • Load power = 48 W (AV)
    • Gain = 19 dB (typ)
    • Efficiency = 40 pct (typ)
    • ACPR400 = -61 dBc (typ)
    • ACPR600 = -72 dBc (typ)
    • EVMrms = 1.5 pct (typ)
  • Easy power control
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (800 MHz to 1000 MHz)
  • Internally matched for ease of use

Products/packages


All type numbers in the table below are discontinued. See the table Discontinued information for more information.

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingECCN
BLF4G10-120BLF4G10-120,1129340 582 17112Discontinued
Replacement product
SOT502A
(LDMOST)
Blister packStandard Marking
BLF4G10S-120BLF4G10S-120,1129340 582 18112Discontinued
Replacement product
SOT502B
(LDMOST)
Blister packStandard Marking

Quality/reliability/chemical content


All type numbers in the table below are discontinued. See the table Discontinued information for more information.

Type numberOrderable part numberChemical contentRoHSLeadfree Conversion dateRHFIRF (FIT)MTBF (hours)MSL
BLF4G10-120BLF4G10-120,112BLF4G10-120
Always Pb-free
BLF4G10S-120BLF4G10S-120,112Not available
Always Pb-free

Quality and reliability disclaimer

Discontinued information

Type numberOrdering code (12NC)Last-time buy dateLast-time delivery dateReplacement productDN NoticeStatusComments
BLF4G10-12093405821711230-sep-0931-dec-09$product.prunedProduct.eplacementPartDN 62
  • Sole source product
  • Standard availability
  • Type number fully withdrawn
Standard End of Life.
BLF4G10S-12093405821811231-mrt-1030-jun-10$product.prunedProduct.eplacementPartDN 64
  • Sole source product
  • Standard availability
  • Type number fully withdrawn
Standard End of Life.

Applications

  • RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range.


Related applications
Power amplifier board

Design support

Support Documents

Parametrics/similar products

Type numberPackageDescriptionproduct application descriptionfrange(MHz)PL(W)?D(%)Gp(dB)VDS(V)mode of operation
BLF4G10-120SOT502A
(LDMOST)
UHF power LDMOS transistorRF power amplifiers for GSM, GSM EDGE and CDMA base stations800 - 1,0001204619281-TONE; EDGE; CW
BLF4G10S-120SOT502B
(LDMOST)
UHF power LDMOS transistorRF power amplifiers for GSM, GSM EDGE and CDMA base stations800 - 1,0001204619282-TONE; CW; EDGE


Similar products
BLF4G10-120; BLF4G10S-120 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.